1
Gurtej Sandhu, Richard L Elliott, Trung T Doan, Jody D Larsen: IC mechanical planarization process incorporating two slurry compositions for faster material removal times. Micron Technology, July 30, 1996: US05540810 (108 worldwide citation)

The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chem ...


2
Gurtej S Sandhu, Richard L Elliott, Trung T Doan, Jody D Larsen: IC mechanical planarization process incorporating two slurry compositions for faster material removal times. Micron Technology, Walter D Fields, November 30, 1999: US05994224 (88 worldwide citation)

The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chem ...


3
Gurtej S Sandhu, Richard L Elliott, Trung T Doan, Jody D Larsen: IC mechanical planarization process incorporating two slurry compositions for faster material removal times. Micron Technology, Walter D Fields, March 21, 2000: US06040245 (88 worldwide citation)

The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a CMP process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chem ...


4
Richard L Elliott, Michael A Walker: Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers. Micron Technology, Seed and Berry, November 25, 1997: US05690540 (82 worldwide citation)

The present invention is a polishing pad for use in chemical-mechanical planarization of semiconductor wafers by placing a wafer against a polishing surface of the polishing pad while rotating the polishing pad about its center in the presence of a polishing slurry. The polishing surface has formed ...


5
Mary E Abreu, Waclaw Rzeszotarski, Donald J Kyle, Roger N Hiner, Richard L Elliott: Corticotropin-releasing factor antagonism compounds. Nova Pharmaceutical Corporation, Vincent L Fabiano, November 5, 1991: US05063245 (62 worldwide citation)

The present invention relates to a method of producing corticotropin-releasing factor (CRF) antagonist activity and thus provides a method of treating a wide range of stress-related disorders, including affective illnesses, such as depression and anxiety, as well as irritable bowel syndrome, anorexi ...


6
Richard L Elliott, John H Givens, Guy F Hudson: Trench/hole fill processes for semiconductor fabrication. Micron Technology, Workman Nydegger & Seeley, September 21, 1999: US05956612 (41 worldwide citation)

A contact space filled with conductive material having good step coverage is disclosed. The contact space is formed in a dielectric layer with an upper surface. The contact space has sidewalls comprised of the dielectric layer and a bottom comprised of an underlying layer. The contact space is fille ...


7
Nan Horng Lin, Mark W Holladay, Melwyn A Abreo, David E Gunn, Suzanne A Lebold, Richard L Elliott, Yun He: Heterocyclic ether compounds useful in controlling neurotransmitter release. Abbott Laboratories, Jerry F Janssen, Monte R Browder, Michael J Ward, June 22, 1999: US05914328 (28 worldwide citation)

Novel heterocyclic ether compounds of the formula: ##STR1## wherein *, A,B, n, R.sup.1, R.sup.2 and X are specifically defined, or pharmaceutically-acceptable salts or prodrugs thereof, which are useful in selectively activating or inhibiting neurotransmitter release; to therapeutically-effective ph ...


8
John H Givens, Richard L Elliott: Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features. Micron Technology, Workman Nydegger and Seeley, August 19, 1997: US05658438 (28 worldwide citation)

A method of sputter deposition for improved side wall and bottom coverage of high aspect ratio features on a substrate includes alternatingly exposing the substrate having high aspect ratio features to a collimated sputtered particle flux and a less-collimated sputtered particle flux until a desired ...


9
John H Givens, Richard L Elliott: Method for improved bottom and side wall coverage of high aspect ratio features. Micron Technology, Workman Nydegger & Seeley, November 16, 1999: US05985103 (23 worldwide citation)

A method is disclosed for improved side wall and bottom coverage of high aspect ratio space situated upon a substrate in two (2) steps. A lining is formed on a side wall surface of the space that terminated at a bottom surface. An opening then remains to a void defined by the lining and the bottom s ...


10
David E Gunn Jr, Richard L Elliott, Nan Horng Lin, Hana A Kopecka, Mark W Holladay: 2-((nitro)phenoxymethyl) heterocyclic compounds that enhance cognitive function. Abbott Laboratories, Jerry F Janssen, Richard A Elder, December 5, 1995: US05472958 (22 worldwide citation)

Selective and potent cholinergic ligands selective for neuronal nicotinic cholinergic channel receptors, which ligands have the formula: ##STR1## as well as pharmaceutically-acceptable salts or prodrugs thereof, which are useful in the treatment of dementias, attentional hyperactivity disorder, or s ...



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