1
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling: Silicon-germanium-carbon compositions in selective etch processes. Lawrence Semiconductor Research Laboratory, Wilson Sonsini Goodrich & Rosati, May 25, 1999: US05906708 (91 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


2
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling, Ziv Atzmon: Silicon-germanium-carbon compositions and processes thereof. Lawrence Semiconductor Research Laboratory, The Regents of the University of California, The Arizona Board of Regents, Robert Moll, May 16, 2000: US06064081 (71 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


3
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling: Wet chemical etchants. Robert Patent Planet Moll, October 5, 1999: US05961877 (29 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


4
Richard C Westhoff, Steven P Caliendo, Joseph T Hillman: Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto. Tokyo Electron, Wood Herron & Evans, November 19, 2002: US06482477 (5 worldwide citation)

A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or ...


5
Joseph T Hillman, Tugrul Yasar, Richard C Westhoff: Method for enhancing the adhesion of a barrier layer to a dielectric. Tokyo Electron, Wood Herron & Evans, October 14, 2003: US06632737 (1 worldwide citation)

A method for chemical vapor deposition comprises providing a thin layer of silicon on the surface of a dielectric-covered substrate prior to depositing a tantalum-based barrier layer from a mixture of a vapor-phase reactant comprising a tantalum halide and a reducing gas. The thin layer of silicon s ...


6
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling, Ziv Atzmon: Silicon-germanium-carbon compositions and processes thereof. Robert Moll, June 27, 2002: US20020081861-A1

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si—Ge—C), methods for growing Si—Ge—C epitaxial layer(s) on a substrate, etchants especially suitable for Si—Ge—C etch-stops, and novel methods of use for Si—Ge—C compositions are provided. In particular, the inven ...



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