1
Scott H Holmberg, Richard A Flasck: Programmable cell for use in programmable electronic arrays. Energy Conversion Devices, Lawrence G Norris, February 12, 1985: US04499557 (387 worldwide citation)

An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or ...


2
Scott Holmberg, Richard A Flasck: Programmable cell for use in programmable electronic arrays. Energy Conversion Devices, Lawrence G Norris, Robert S Nolan, John T Winburn, July 8, 1986: US04599705 (332 worldwide citation)

A programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and substantially non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms ...


3
Herbert Stopper, Richard A Flasck: Universal interconnection substrate. Mosaic Systems, Burroughs Corporation, Lynn L Augspurger, July 3, 1984: US04458297 (130 worldwide citation)

Disclosed is a wafer substrate for integrated circuits (1) which by itself may be made either of conductive or non-conductive material. This substrate carries two planes or layers of patterned metal (19, 20), thus providing two principal levels of interconnection. An insulation layer (21) is placed ...


4
Richard A Flasck, Benny Irwin, Scott H Holmberg: Method of illuminating flat panel displays to provide CRT appearing displays. Alphasil, Silverman Cass Singer & Winburn, June 27, 1989: US04842378 (130 worldwide citation)

LCD screen illumination is provided by a neon tube formed to fit closely adjacent the screen. A tube formed to fit around the periphery of the screen shielded from the viewer's eyes can be utilized to front light the screen. A serpentine shaped tube can be placed adjacent the back of the screen to b ...


5
Richard A Flasck: Active matrix reflective projection system. RAF Electronics, Leydig Voit & Mayer, June 11, 1991: US05022750 (77 worldwide citation)

An active matrix reflective projection system utilizing a conventional wafer includes a reflective image plane module. The reflective image plane module includes light directing and reflecting structures and a wafer based active matrix mated thereto. A source of light is directed to the reflective i ...


6
Scott H Holmberg, Richard A Flasck: Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby. Alphasil, Silverman Cass Singer & Winburn, April 11, 1989: US04820222 (46 worldwide citation)

Subdivided pixels are provided with interconnected and hence redundant row and column bus lines to reduce fatal defects. The respective redundant row and column lines also can be interconnected between subpixels to further reduce defects. One defective subpixel is generally an acceptable non-fatal d ...


7
Richard A Flasck: Active matrix reflective image plane module and projection system. RAF Electronics, Foley & Lardner, April 28, 1992: US05108172 (33 worldwide citation)

An improved active matrix reflective projection system utilizing a conventional wafer includes a reflective image plane module forming two focal images. The image plane module includes light directing and reflecting structures and a wafer based active matrix. A source of light is directed to the ima ...


8
Scott H Holmberg, Richard A Flasck: Method of manufacturing thin film transistors and transistors made thereby. Alphasil Incorporated, Limbach Limbach & Sutton, October 8, 1985: US04545112 (27 worldwide citation)

An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a ce ...


9
Howard K Rockstad, Richard A Flasck: N-type amorphous semiconductor materials. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, September 28, 1976: US03983076 (24 worldwide citation)

New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures the ...


10
Scott H Holmberg, Richard A Flasck: Method of manufacturing thin film transistors and transistors made thereby. Alphasil, Silverman Cass Singer & Winburn, March 17, 1987: US04651185 (21 worldwide citation)

An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, a dielectric is patterned to form a central portio ...