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Richard A Ferguson, Mark A Lavin, Lars W Liebmann, Alfred K Wong: Process window based optical proximity correction of lithographic images. International Business Machines Corporation, Peter W Peterson, Tiffany L Townsend, DeLio & Peterson, June 10, 2003: US06578190 (217 worldwide citation)

A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate. The method comprises initially providing a mask pattern of a feature to be created on the substrate using the mask. The method then includes establishing target dimensional bounds of the ...


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Alfred K Wong, Richard A Ferguson: Kernel-based fast aerial image computation for a large scale design of integrated circuit patterns. International Business Machines Corporation, H Daniel Schnurmann, April 24, 2001: US06223139 (53 worldwide citation)

A method of simulating aerial images of large mask areas obtained during the exposure step of a photo-lithographic process when fabricating a semiconductor integrated circuit silicon wafer is described. The method includes the steps of defining mask patterns to be projected by the exposure system to ...


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Richard A Ferguson, Lars W Liebmann, Scott M Mansfield, David S O Grady, Alfred K Wong: Exact transmission balanced alternating phase-shifting mask for photolithography. International Business Machines Corporation, H Daniel Schnurmann, August 3, 1999: US05932377 (49 worldwide citation)

A two-step method for eliminating transmission errors in alternating phase-shifting masks is described. Initially, the design data is selectively biased to provide a coarse reduction in the inherent transmission error between features of different phase, size, shape, and/or location. During fabricat ...


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William J Adair, Richard A Ferguson, Mark C Hakey, Steven J Holmes, David V Horak, Robert K Leidy, William Hsioh Lien Ma, Ronald M Martino, Song Peng: Method for forming cornered images on a substrate and photomask formed thereby. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, February 6, 2001: US06184151 (40 worldwide citation)

A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the firs ...


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Lars W Liebmann, Richard A Ferguson, Allen H Gabor, Mark A Lavin: Binary OPC for assist feature layout optimization. International Business Machines Corporation, Todd M C Li, February 21, 2006: US07001693 (26 worldwide citation)

A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element ...


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Lars W Liebmann, Richard A Ferguson: Focus monitor for alternating phase shifted masks. International Business Machines Corporation, H Daniel Schnurmann, Ratner & Prestia, August 10, 1999: US05936738 (19 worldwide citation)

A focus monitor for establishing best focus of a lithographic system in semiconductor wafers. The focus monitor has a phase region having a first phase and a slot disposed within the phase region having a gap size indicative of a defocus level of the lithographic system.


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Lars W Liebmann, Richard A Ferguson, Allen H Gabor, Mark A Lavin: Binary OPC for assist feature layout optimization. International Business Machines Corporation, Todd M C Li, December 12, 2006: US07147976 (16 worldwide citation)

A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element ...


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Richard A Ferguson, Lars W Liebmann, Ronald M Martino, Thomas H Newman: High resolution phase edge lithography without the need for a trim mask. International Business Machines Corporation, Charles W Peterson, Whitham Curtis Whitham & McGinn, July 23, 1996: US05538833 (15 worldwide citation)

A process of phase edge lithography is employed in the manufacture of very large scale integrated (VLSI) chips in which chrome images are biased on a phase edge of a phase shift mask (PSM) and the mask overexposed to compensate for the positive bias. This overexposure eliminates any residual images ...


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William J Adair, Richard A Ferguson, Mark C Hakey, Steven J Holmes, David V Horak, Robert K Leidy, William Hsioh Lien Ma, Ronald M Martino, Song Peng: Method for forming cornered images on a substrate and photomask formed thereby. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 28, 1999: US05959325 (13 worldwide citation)

A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the firs ...



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