1
Katherina Babich
Katherina Babich, Todd C Bailey, Richard A Conti, Ryan P Deschner: Mask forming and implanting methods using implant stopping layer and mask so formed. International Business Machines Corporation, Wenjie Li, Hoffman Warnick, January 26, 2010: US07651947 (2 worldwide citation)

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: ...


2
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, February 3, 2009: US07485573 (1 worldwide citation)

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, June 28, 2011: US07968270

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


4
Katherina Babich
Katherina Babich, Todd C Bailey, Richard A Conti, Ryan P Deschner: Mask forming and implanting methods using implant stopping layer. International Business Machines Corporation, Wenji Li, Hoffman Warnick, August 16, 2011: US07998871

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: ...


5
Katherina Babich
Katherina Babich, Todd C Bailey, Richard A Conti, Ryan P Deschner: Mask forming and implanting methods using implant stopping layer and mask so formed. International Business Machines Corporation, Hoffman Warnick & D Alessandro, November 29, 2007: US20070275563-A1

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: ...


6
Katherina Babich
Katherina Babich, Todd C Bailey, Richard A Conti, Ryan P Deschner: Mask having implant stopping layer. Hoffman Warnick, November 20, 2008: US20080286545-A1

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: ...


7
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, August 23, 2007: US20070196748-A1

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


8
Katherina Babich
Katherina Babich, Todd C Bailey, Richard A Conti, Ryan P Deschner: Mask forming and implanting methods using implant stopping layer. Hoffman Warnick, January 1, 2009: US20090004869-A1

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: ...


9
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. Internation Business Machines Corporation, Connolly Bove Lodge & Hutz, December 18, 2008: US20080311508-A1

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


10
George D Papasouliotis, Ashima B Chakravarti, Richard A Conti, Laertis Economikos, Patrick A Van Cleemput: High throughput chemical vapor deposition process capable of filling high aspect ratio structures. Novellus Systems, International Business Machines Corporation, Tom Chen, Skjerven Morrill MacPherson Franklin & Friel, February 29, 2000: US06030881 (278 worldwide citation)

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to qu ...