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Rhodes Howard E: Local interconnect structure for a cmos image sensor and its manufacturing method. Omnivision Tech, June 14, 2006: EP1670062-A1 (172 worldwide citation)

A self-aligned silicide (salicide) process is used to form a local interconnect for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An oxide layer is deposited over the pixel array of the image sensor. Portions of the oxide layer is removed and a metal layer is dep ...


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Rhodes Howard E: Method of operating an active pixel that has positive transfer gate voltage during integration period. Omnivision Tech, April 19, 2006: EP1648160-A1 (14 worldwide citation)

A pixel and image sensor formed in accordance with the present invention has two modes of operation: a normal mode and a low light mode. The present invention switches from a normal to a low light mode based upon the amount of illumination on the image sensor. Once the level of illumination is deter ...


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Rhodes Howard E, Hong Sungkwon Chris: Dual conversion gain imagers. Micron Technology, Rhodes Howard E, Hong Sungkwon Chris, D AMICO Thomas J, December 23, 2004: WO/2004/112376 (7 worldwide citation)

An imager with dual conversion gain floating diffusion regions. The dual conversion gain regions yield (1) high conversion gain and sensitivity to achieve excellent low light performance and (2) high full well capacity and conversion gain to achieve high dynamic range. A dual conversion gain element ...


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Rhodes Howard E: Charge pumps for cmos imagers. Micron Technology, Rhodes Howard E, D AMICO Thomas J, December 29, 2004: WO/2004/114652 (6 worldwide citation)

A pixel for an imaging device is described. The pixel includes a photosensitive device provided within a substrate for providing photo-generated charges, a circuit associated with the photosensitive device for providing at least one pixel output signal representative of the photo-generated charges, ...


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Rhodes Howard E: Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response. Omnivision Technologies, August 1, 2006: TW200627635 (5 worldwide citation)

An image sensor is formed on a multilayered substrate to improve infrared response. The multilayered substrate uses a silicon-germanium alloy to improve infrared response. In one embodiment. the silicon-germanium alloy has a germanium concentration gradient such that an upper portion of the silicon- ...


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Rhodes Howard E, Nozaki Hidetoshi: Image sensor pixel having a lateral doping profile formed with indium doping. Omnivision Tech, July 19, 2006: EP1681721-A2 (4 worldwide citation)

An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed be ...


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Rhodes Howard E: Image sensor pixel having photodiode with indium pinning layer. Omnivision Tech, June 7, 2006: EP1667232-A2 (4 worldwide citation)

An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N - region formed within a P-type region. A pinning layer formed from indium is then formed at the surface of the ...


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Nagaraja Satyadev H, Rhodes Howard E: Method and apparatus for reducing optical crosstalk in cmos image sensors. Omnivision Tech, February 28, 2007: EP1758372-A1 (3 worldwide citation)

An image sensor in which the metal interconnects are coated with an anti-reflective coating is disclosed The top, bottom and sides of the metal interconnects may be coated to reduce reflection from all directions. The thickness of the coating is chosen to suppress reflection of light of certain wave ...


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Rhodes Howard E: Image sensor using deep trench isolation. Omnivision Tech, August 16, 2006: EP1691418-A1 (3 worldwide citation)

An image sensor that has a pixel array formed on a semiconductor substrate is disclosed. The pixel array may also be formed on an epitaxial layer formed on the said semiconductor substrate. A plurality of pixels are arranged in a pattern and formed on the epitaxial layer or directly on the semicondu ...