1
Constantin Bulucea, Rebecca Rossen: Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry. Siliconix Incorporated, Skjerven Morrill MacPherson Franklin & Friel, December 10, 1991: US05072266 (236 worldwide citation)

Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned in order to suppress oxide dielectric breakdown, using a shaped deep body junction that partly lies below the trench bottom to force v ...


2
Constantin Bulucea, Rebecca Rossen: DMOS power transistor with reduced number of contacts using integrated body-source connections. Siliconix incorporated, Edward C Kwok, Skjerven Morrill MacPherson Franklin & Friel, February 2, 1999: US05866931 (53 worldwide citation)

Two topologically different cells are disclosed that reduce the total number of contacts per device and that are applicable to mid- to high-voltage DMOS transistors. These cells use integrated connections between the source and the body that make them less sensitive to contact obturations by particl ...


3
Constantin Bulucea, Rebecca Rossen: Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry. Siliconix incorporated, Skjerven Morrill MacPherson Franklin & Friel, March 29, 1994: US05298442 (45 worldwide citation)

Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using special procedures for growth of gate oxide at ...


4
Constantin Bulucea, Rebecca Rossen: DMOS power transistors with reduced number of contacts using integrated body-source connections. Siliconix Incorporated, Edward C Kwok, Skjerven Morrill MacPherson Franklin & Friel, April 25, 1995: US05410170 (33 worldwide citation)

Two topologically different cells are disclosed that reduce the total number of contacts per device and that are applicable to mid- to high-voltage DMOS transistors. These cells use integrated connections between the source and the body that make them less sensitive to contact obturations by particl ...


5
Constantin Bulucea, Rebecca Rossen: Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry. Siliconix Incorporated, September 30, 2003: US06627950 (20 worldwide citation)

Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using special procedures for growth of gate oxide at ...


6
Rebecca Rossen: Tungsten etch process with high selectivity to photoresist. Applied Materials, Paul L Hickman, John P Taylor, August 14, 1990: US04948462 (19 worldwide citation)

A process is disclosed for the etching of a tungsten layer on a semiconductor wafer through a photoresist mask to form a pattern of tungsten lines on the wafer. The process is characterized by a high selectivity to photoresist material and resistance to lateral etching or undercutting of the tungste ...