1
Shivaling S Mahant Shetti, Thomas J Aton, Rebecca J Gale: Scanning electron microscope based parametric testing method and apparatus. Texas Instruments Incorporated, Ira S Matsil, B Peter Barndt, Richard L Donaldson, November 3, 1992: US05159752 (116 worldwide citation)

A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). ...


2
Roc Blumenthal, Rebecca J Gale: Process for selectively depositing a metal in vias and contacts by using a sacrificial layer. Texas Instruments Incorporated, Stanton C Braden, Richard L Donaldson, William E Hiller, March 31, 1992: US05100501 (39 worldwide citation)

A process for selectively depositing a contacting material (20) in trenches (18) for a via or contact which selectively eliminates potential metal contaminants (22) by removing a sacrificial layer (16) after the material (20) is selectively deposited. Initially, the trenches (18) are formed by selec ...


3
Antonio L P Rotondaro, Reima Tapani Laaksonen, Robert Kraft, Charlotte M Appel, Rebecca J Gale, Katherine E Violette: Silicon processing method. Texas Instruments Incorporated, Carlton H Hoel, W James Brady, Frederick J Telecky Jr, April 10, 2001: US06214736 (7 worldwide citation)

A plasma process is described which produces an undamaged and uncontaminated silicon surface by consuming silicon by continuous oxidation through a surface oxide layer and a simultaneous etch of the exposed silicon oxide surface. The surface silicon dioxide layer thickness is controlled as an equili ...