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Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Method to deposit SiOCH films with dielectric constant below 3.0. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, January 22, 2002: US06340628 (87 worldwide citation)

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO


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Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg, Herman Gene Hockenhull, Felicia Diane Kaminsky: Silicon nitride from bis(tertiarybutylamino)silane. Air Products and Chemicals, Geoffrey L Chase, February 23, 1999: US05874368 (78 worldwide citation)

A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.


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Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Dielectric films with low dielectric constants. Beyer Weaver & Thomas, June 10, 2003: US06576345 (47 worldwide citation)

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like ...


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Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg: Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane. Air Products and Chemicals, Geoffrey L Chase, November 2, 1999: US05976991 (46 worldwide citation)

A process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. A process whereby a stack of silicon containing dielectrics ranging from ...


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Ravi Laxman
Ravi Kumar Laxman, Arthur Kenneth Hochberg: Low temperature deposition of silicon dioxide using organosilanes. Air Products and Chemicals, Geoffrey L Chase, April 28, 1998: US05744196 (24 worldwide citation)

The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of


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Ravi Laxman
Yin Pang Tsui, Thomas Elwood Zellner, Rajiv K Agarwal, Ravi Kumar Laxman: Process for the production and purification of bis(tertiary-butylamino)silane. Air Products and Chemicals, Rosaleen P Morris Oskanian, November 8, 2005: US06963006 (6 worldwide citation)

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...


7
Ravi Laxman
Ravi Kumar Laxman: Purification of organosilanes of group 13 (IIIA) and 15 (VA) impurities. Air Products and Chemicals, Geoffrey L Chase, May 11, 1999: US05902893 (2 worldwide citation)

A process for removal of Group 13 and/or 15 elements from an organosilane containing Group 13 and/or 15 elements as contaminants comprising contacting the organosilane with a reagent substantially soluble in the organosilane and capable of forming a complex with the Group 13 and/or Group 15 element ...


8
Ravi Laxman
Yin Pang Tsui, Thomas Elwood Zellner, Rajiv K Agarwal, Ravi Kumar Laxman: Process for the production and purification of bis(tertiary-butylamino)silane. Air Products And Chemicals, July 15, 2004: US20040138491-A1

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...


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