1
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Method to deposit SiOCH films with dielectric constant below 3.0. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, January 22, 2002: US06340628 (87 worldwide citation)

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO


2
Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg, Herman Gene Hockenhull, Felicia Diane Kaminsky: Silicon nitride from bis(tertiarybutylamino)silane. Air Products and Chemicals, Geoffrey L Chase, February 23, 1999: US05874368 (80 worldwide citation)

A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.


3
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Dielectric films with low dielectric constants. Beyer Weaver & Thomas, June 10, 2003: US06576345 (47 worldwide citation)

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like ...


4
Ravi Laxman
Ravi Kumar Laxman, David Allen Roberts, Arthur Kenneth Hochberg: Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane. Air Products and Chemicals, Geoffrey L Chase, November 2, 1999: US05976991 (46 worldwide citation)

A process for the chemical vapor deposition of silicon dioxide and silicon oxynitride from reactant gases O.sub.2, O.sub.3, N.sub.2 O, NO, NO.sub.2, NH.sub.3 and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2. A process whereby a stack of silicon containing dielectrics ranging from ...


5
Ravi Laxman
Ravi Kumar Laxman, Arthur Kenneth Hochberg: Low temperature deposition of silicon dioxide using organosilanes. Air Products and Chemicals, Geoffrey L Chase, April 28, 1998: US05744196 (24 worldwide citation)

The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of


6
Ravi Laxman
Yin Pang Tsui, Thomas Elwood Zellner, Rajiv K Agarwal, Ravi Kumar Laxman: Process for the production and purification of bis(tertiary-butylamino)silane. Air Products and Chemicals, Rosaleen P Morris Oskanian, November 8, 2005: US06963006 (6 worldwide citation)

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...


7
Ravi Laxman
Ravi Kumar Laxman: Purification of organosilanes of group 13 (IIIA) and 15 (VA) impurities. Air Products and Chemicals, Geoffrey L Chase, May 11, 1999: US05902893 (2 worldwide citation)

A process for removal of Group 13 and/or 15 elements from an organosilane containing Group 13 and/or 15 elements as contaminants comprising contacting the organosilane with a reagent substantially soluble in the organosilane and capable of forming a complex with the Group 13 and/or Group 15 element ...


8
Ravi Laxman
Yin Pang Tsui, Thomas Elwood Zellner, Rajiv K Agarwal, Ravi Kumar Laxman: Process for the production and purification of bis(tertiary-butylamino)silane. Air Products And Chemicals, July 15, 2004: US20040138491-A1

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...


9
Ravi Kumar, Paul William Weschler Jr: External data store link for a profile service. Sun Microsystems, Stuart T Langley, William J Kubida, Hogan & Hartson, January 29, 2002: US06343287 (353 worldwide citation)

A profile service, instance is linked to a plurality of external data stores. Each external data store is associated with a predefined data store connector class that describes a connector object that establishes a link and provides methods to query the associated data store. An external data store ...


10
Ravi Kumar Jain, John St Clair Werth Jr: Periodic wireless data broadcast. Bell Communications Research, James W Falk, Joseph Giordano, November 24, 1998: US05842010 (151 worldwide citation)

A periodic wireless data transmission has improved access latency obtaining information regarding users' interest in the information and by arranging the information on an transmission in order of descending popularity. In one embodiment, each adjacent pair of topics on the transmission. The topics' ...



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