1
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 23, 2003: US06624478 (25 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


2
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Schmeiser Olson & Watts, William D Sabo, November 8, 2005: US06962838 (4 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


3
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. Schmeiser Olsen Watts, December 18, 2003: US20030232467-A1

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


4
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in soi and method for forming. International Business Machines Corporation, Jack P Friedman, Schmeiser Olsen & Watts, July 31, 2003: US20030141548-A1

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


5
David M Fried, Randy W Mann, K Paul Muller, Edward J Nowak: FinFET SRAM cell using low mobility plane for cell stability and method for forming. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, August 8, 2006: US07087477 (101 worldwide citation)

The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relat ...


6
David M Fried, Randy W Mann, K Paul Muller, Edward J Nowak: Finfet SRAM cell using low mobility plane for cell stability and method for forming. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, November 22, 2005: US06967351 (75 worldwide citation)

The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relat ...


7
Fariborz Assaderaghi, Andres Bryant, Peter E Cottrell, Robert J Gauthier Jr, Randy W Mann, Edward J Nowak, Jed H Rankin: Grounded body SOI SRAM cell. International Business Machines Corporation, Richard A Henkler, Schmeiser Olsen & Watts, November 11, 2003: US06646305 (29 worldwide citation)

A semiconductor memory device comprising: an SOI substrate having a thin silicon layer on top of a buried insulator; and an SRAM comprising four NFETs and two PFETs located in the thin silicon layer, each the NFET and PFET having a body region between a source region and a drain region, wherein the ...


8
John E Cronin, Carter W Kaanta, Randy W Mann, Darrell Meulemans, Gordon S Starkey: Method of making overpass mask/insulator for local interconnects. International Business Machines Corporation, Heslin & Rothenberg, March 5, 1996: US05496771 (28 worldwide citation)

Fabrication methods and resultant semiconductor structures wherein stack structures are selectively insulated from an enveloping layer of local interconnect material. The fabrication methods involve forming an overpass insulator(s) simultaneously with the underlying gate. Specifically, a layer of no ...


9
John E Bertsch, Randy W Mann, Edward J Nowak, Minh H Tong: Fabrication test circuit and method for signalling out-of-spec resistance in integrated circuit structure. International Business Machines Corporation, Heslin & Rothenberg, January 16, 1996: US05485095 (27 worldwide citation)

Test circuits and methods for accurately flagging out-of-spec resistance in a current carrying structure of an integrated circuit employ a plurality of monitor structures connected in parallel and a test means for monitoring the monitor structures. Each monitor structure includes a test structure an ...


10
Cyril Cabral Jr, Lawrence A Clevenger, Francois M d Heurle, James M E Harper, Randy W Mann, Glen L Miles, Donald W D Rakowski: Method for lowering the phase transformation temperature of a metal silicide. International Business Machines Corporation, Heslin & Rothenberg, April 23, 1996: US05510295 (25 worldwide citation)

The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the ...