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Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Gambino Jeffrey P, He Zhong Xiang, Ramachandran Vidhya: Metal-insulator-metal capacitor and method of fabrication. International Business Machines Corporation, August 25, 2006: KR1020067005670

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top s ...


2
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, March 12, 2007: KR1020067025149

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


3
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor simultaneously with aluminum metal wiring level using a hardmask. Ibm, June 6, 2007: EP1792343-A2

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


4
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, He Zhong Xiang, Murphy William J, Ramachandran Vidhya: Method of forming semiconductor parts and semiconductor parts. Ibm, fu jianjun, December 7, 2005: CN200510064820

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...


5
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor using a hardmask. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara, CANALE Anthony J, December 22, 2005: WO/2005/122245

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


6
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Gambino Jeffrey P, He Zhong Xiang, Ramachandran Vidhya: Metal-insulator-metal capacitor and method of fabrication. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Gambino Jeffrey P, He Zhong Xiang, Ramachandran Vidhya, SABO William D, April 14, 2005: WO/2005/034201

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interievel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interievel dielectric layer, atop surface of the bottom electrode co-planer with a top su ...


7
Clevenger Lawrence, Dalton Timothy Joseph, Hsu Louis Lu Chen, Radens Carl John, Ramachandran Vidhya, Wong Keith Kwong Hon, Yang Chih Chao: Semiconductor integrated circuit devices having high-q wafer back-side capacitors. International Business Machines Corporation, IBM United Kingdom, Clevenger Lawrence, Dalton Timothy Joseph, Hsu Louis Lu Chen, Radens Carl John, Ramachandran Vidhya, Wong Keith Kwong Hon, Yang Chih Chao, LING Christopher John, December 6, 2007: WO/2007/137969 (3 worldwide citation)

Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip capacitors formed on the chip back-side and connected to integrated circuits on the chip front-side using through-wafer interconnects. In one aspect, a semico nductor device includes a semiconducto ...


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He Zhong Xiang, Joseph J Alvin, Orner A Bradley, Ramachandran Vidhya, St Onge A Stephen, Wang Ping Chuan: Bipolar and cmos integration with reduced contact height. Ibm, August 30, 2006: EP1695383-A1

Disclosed is a method and structure for an integrated circuit structure that includes a plurality of complementary metal oxide semiconductor (CMOS) transistors (116) and a plurality of vertical bipolar transistors (118) positioned on a single substrate (110). The vertical bipolar transistors (118) a ...


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Coolbaugh Douglas D, Eshun Ebenezer E, Gambino Jeffrey P, He Zhong Xiang, Ramachandran Vidhya: Metal-insulator-metal capacitor and method of fabrication. Ibm, June 21, 2006: EP1671358-A2

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top s ...