1
Todd Olson, Dan Meiser, Gary Steed, Eric Huffman, Matthew Otten, Ronald VanOverloop, Darrel Powell, Thomas Knodell, Edward Rhad, Ralph Chen, Robert Cook: Linear stapling mechanism with cutting means. Ethicon, Paul A Coletti, May 3, 1994: US05307976 (827 worldwide citation)

A stapler mechanism is described which contains a stapling assembly, and anvil assembly, firing means and knife means. These means are activated by a firing trigger. The anvil assembly is closed upon the stapling assembly by means of a closure trigger. The firing trigger is inoperable until the clos ...


2
Todd Olson, Dan Meiser, Gary Steed, Eric Huffman, Matthew Otten, Ronald VanOverloop, Darrel Powell, Thomas Knodell, Edward Rhad, Ralph Chen, Robert Cook: Linear stapling mechanism with cutting means. Ethicon, Paul A Coletti, January 23, 1996: US05485947 (705 worldwide citation)

A stapler mechanism is described which contains a stapling assembly, and anvil assembly, firing means and knife means. These means are activated by a firing trigger. The anvil assembly is closed upon the stapling assembly by means of a closure trigger. The firing trigger is inoperable until the clos ...


3
Stephen C Robinson, Todd Olson, Dan Meiser, Gary Steed, Eric Huffman, Matthew Otten, Ronald VanOverloop, Darrel Powell, Thomas Knodell, Edward Rhad, Ralph Chen, Robert Cook: Linear stapling mechanism with cutting means. Ethicon, July 26, 1994: US05332142 (643 worldwide citation)

A stapler mechanism is described which contains a stapling assembly, and anvil assembly, firing means and knife means. These means are activated by a firing trigger. The anvil assembly is closed upon the stapling assembly by means of a closure trigger. The firing trigger is inoperable until the clos ...


4
Ralph Chen, Marcus Yang, Yuan Li Tsai, Ching Chun Huang, Sheng Hsiung Yang: Method of fabrication LCOS structure. United Microelectronics, Merchant & Gould P C, September 28, 2004: US06797983 (13 worldwide citation)

A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a high ...


5
Ralph Chen: Antenna structure. Grand Tek Technology, Chun Ming Shih, HDLS IPR Services, September 4, 2012: US08259031 (3 worldwide citation)

This invention provides an improved antenna structure comprising a connecting unit having a connector, a lightning rod, and a signal transmission section. The two ends of the connector has the first and second connecting sections, with the signal transmission section extending out the first and seco ...


6
Yuan Li Tsai, Marcus Yang, Ralph Chen, Heng Chun Kao, Ching Chun Hwang: Method for forming high resistance resistor with integrated high voltage device process. United Microelectronics, September 23, 2003: US06624079 (1 worldwide citation)

The method for forming high voltage device combined with a mixed mode process use an un-doped polysilicon layer instead of the conventional polysilicon layer. In the high resistance area, the ion implant is not used until the source region and the drain region are formed. A resistor is formed by etc ...


7
Ralph Chen, Marcus Yang, Yuan Li Tsai, Ching Chun Huang, Sheng Hsiung Yang: Method of fabrication lCOS structure. United Microelectronics, Merchant & Gould PC, July 31, 2003: US20030143768-A1

A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a high ...


8
Yuan Li Tsai, Marcus Yang, Ralph Chen, Heng Chun Kao, Ching Chun Hwang: Method for forming high resistance resistor with integrated high voltage device process. United Microelectronics, Lowe Hauptman Gilman & Berner, February 20, 2003: US20030036276-A1

A method for forming a high resistance resistor with an integrated high voltage device process is disclosed. First and second field oxide areas are formed on a substrate and an undoped first polysilicon layer is deposited. A first photoresist layer having a resistor pattern is formed on the first fi ...


9
Ralph Chen: Antenna Structure. Kamrath & Associates Pa, December 2, 2010: US20100302124-A1

This invention provides an improved antenna structure comprising a connecting unit having a connector, a lightning rod, and a signal transmission section. The two ends of the connector has the first and second connecting sections, with the signal transmission section extending out the first and seco ...