1
Phillip Jacobs
Rajesh Odedra, Megan Ravetz, Graham Williams, Phillip Reeve Jacobs: Process and apparatus for the isolation of pure, or substantially pure, organometallic compounds. Sigma Aldrich Co, Jeffrey A Wilson, October 16, 2007: US07282119 (11 worldwide citation)

A process and apparatus to enable the continuous isolation of an organometallic compound, such as trimethylindium from a liquid feedstock. The liquid feedstock is delivered to a distillation column having two heating zones to effect dissociation of the feed stock thereby liberating the organometalli ...


2
Megan Ravetz, Graham Williams, Andrew Nelson, Roy Trevor Blunt, Howard Williams, Rajesh Odedra: Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites. Epichem, IQE, March 2, 2004: US06698728 (17 worldwide citation)

A method and apparatus for the bulk delivery of a precursor, such as an organometallic compound, from a bulk container, such as a bubbler (


3
Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra: Methods of atomic layer deposition using hafnium and zirconium-based precursors. Sigma Aldrich Co, Harness Dickey & Pierce, October 18, 2011: US08039062 (9 worldwide citation)

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L ...


4
Adrien LaVoie, Mark J Saly, Daniel Moser, Rajesh Odedra, Ravi Konjolia: Method of plasma activated deposition of a conformal film on a substrate surface. Novellus Systems, May 20, 2014: US08728955 (8 worldwide citation)

A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)dieth ...


5
Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra: Methods of atomic layer deposition using titanium-based precursors. Sigma Aldrich Co, Harness Dickey & Pierce, July 17, 2012: US08221852 (4 worldwide citation)

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alk ...


6
Hugh Cunning, Graham Williams, Rajesh Odedra, Ravi Kanjolia: Bubbler for the transportation of substances by a carrier gas. Sigma Aldrich Co, Harness Dickey & Pierce, September 25, 2012: US08272626 (1 worldwide citation)

A bubbler (2) for delivering liquid or solid metalorganic compounds to a reactor site. The bubbler has an inner and outer chamber and has a member (14) positioned between its inlet (6) and outlet (8) that is provided with a plurality of apertures therein. The member (14) is preferably in the form of ...


7
Ravi Kanjolia, Rajesh Odedra, Neil Boag: Organometallic precursors for use in chemical phase deposition processes. Sigma Aldrich Co, Harness Dickey & Pierce, July 2, 2013: US08476467 (1 worldwide citation)

An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X)  (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic laye ...


8
Ravi Kanjolia, Rajesh Odedra, Neil Boag, David Weyburne: Methods of forming thin metal-containing films by chemical phase deposition. Sigma Aldrich Co, Harness Dickey & Pierce, July 9, 2013: US08481121 (1 worldwide citation)

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor correspo ...


9
Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra: Methods of atomic layer deposition using titanium-based precursors. Sigma Aldrich Co, Harness Dickey & Pierce, September 9, 2014: USRE045124

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alk ...


10
Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia: High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films. Sigma Aldrich Co, Harness Dickey & Pierce, May 12, 2015: US09028917

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can ...



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