1
Ulrich Klostermann
Daniel Braun, Rainer Leuschner, Ulrich Klostermann: MRAM with magnetic via for storage of information and field sensor. Infineon Technologies, Altis Semiconductor, Dicke Billig & Czaja PLLC, August 15, 2006: US07092284 (45 worldwide citation)

A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy wit ...


2
Ulrich Klostermann
Rainer Leuschner, Ulrich Klostermann: Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, April 13, 2010: US07697322 (26 worldwide citation)

Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction i ...


3
Ulrich Klostermann
Ulrich Klostermann, Rainer Leuschner: Integrated circuit, method of manufacturing an integrated circuit, and memory module. Qimonda, Altis Semiconductor SNC, December 21, 2010: US07855435 (12 worldwide citation)

According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between ...


4
Ulrich Klostermann
Human Park, Ulrich Klostermann, Rainer Leuschner: Condensed memory cell structure using a FinFET. Qimonda, Altis Semiconductor SNC, John S Economou, March 4, 2014: US08665629 (10 worldwide citation)

An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory element. The resistivity changing memory element is electrically coupled to a select transistor that in ...


5
Ulrich Klostermann
Rainer Leuschner, Daniel Braun, Gill Yong Lee, Ulrich Klostermann: Magnetic memory with static magnetic offset field. Infineon Technologies, Altis Semiconductor, Dicke Billig & Czaja PLLC, July 11, 2006: US07075807 (7 worldwide citation)

A magnetoresistive or magnetic memory element and a magnetic random access memory having one or more magnetic memory elements. The memory element includes a magnetic tunnel junction including first and a second magnetic layers. The first magnetic layer having a free magnetization. The free magnetiza ...


6
Ulrich Klostermann
Dietmar Gogl, Rainer Leuschner, Ulrich Klostermann: Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit. Qimonda, ALTIS Semiconductor SNC, March 8, 2011: US07903454 (7 worldwide citation)

According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a p ...


7
Ulrich Klostermann
Daniel Braun, Peter Beer, Rainer Leuschner, Ulrich Klostermann: MRAM with vertical storage element in two layer-arrangement and field sensor. Infineon Technologies, Dicke Billig & Czaja PLLC, August 8, 2006: US07088612 (7 worldwide citation)

A magnetic memory element including a magnetic storage element including two magnetic layers made of magnetic material, said two magnetic layers opposing each other in a parallel relationship and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, sa ...


8
Ulrich Klostermann
Rainer Leuschner, Ulrich Klostermann, Richard Ferrant: MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations. Qimonda, ALTIS Semiconductor SNC, November 13, 2012: US08310866 (4 worldwide citation)

A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Tb ...


9
Michael Sebald, Recai Sezi, Rainer Leuschner, Siegfried Birkle, Hellmut Ahne: Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development. Siemens Aktiengesellschaft, Hill Steadman & Simpson, August 10, 1993: US05234793 (74 worldwide citation)

A photolithographic method for structure generation in bilayer processes is provided. Pursuant to the method, a dimensional reserve is produced in a top resist structure by chemical treatment with a bulging agent. The expansion preferably is performed by treatment with an aqueous solution. The expan ...


10
Recai Sezi, Michael Sebald, Rainer Leuschner, Siegfried Birkle, Hellmut Ahne: Etch-resistant deep ultraviolet resist process having an aromatic treating step after development. Siemens Aktiengesellschaft, Hill Van Santen Steadman & Simpson, December 22, 1992: US05173393 (62 worldwide citation)

A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant com ...



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