1
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Beyer Weaver & Thomas, December 12, 2006: US07148155 (255 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


2
George D Papasouliotis, Vishal Gauri, Raihan M Tarafdar, Vikram Singh: High-density plasma process for filling high aspect ratio structures. Novellus Systems, Beyer Weaver & Thomas, January 25, 2005: US06846745 (156 worldwide citation)

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and f ...


3
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Weaver Austin Villeneuve & Sampson, September 7, 2010: US07790633 (102 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


4
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition. Novellus Systems, Beyer Weaver, November 20, 2007: US07297608 (56 worldwide citation)

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. Th ...


5
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkins, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie, Wai Fan Yau, Brian G Lu, Timothy M Archer, Sasson Roger Somekh: Conformal nanolaminate dielectric deposition and etch bag gap fill process. Novellus Systems, Weaver Austin Villeneuve & Sampson, January 27, 2009: US07482247 (52 worldwide citation)

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of ...


6
Dennis M Hausmann, Jeff Tobin, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar, Adrianne K Tipton, Bunsen Nie: Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer. Novellus Systems, Beyer Weaver, April 10, 2007: US07202185 (28 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes ...


7
Ron Rulkens, Dennis M Hausmann, Raihan M Tarafdar, George D Papasouliotis, Bunsen Nie, Adrianne K Tipton, Jeff Tobin: films, Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO. Novellus Systems, Beyer Weaver & Thomas, August 29, 2006: US07097878 (22 worldwide citation)

A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors wi ...


8
Dennis M Hausmann, Adrianne K Tipton, Bunsen Nie, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar: Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD). Novellus Systems, Beyer Weaver & Thomas, October 31, 2006: US07129189 (20 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surfa ...


9
George D Papasouliotis, Jeff Tobin, Ron Rulkens, Dennis M Hausmann, Adrianne K Tipton, Raihan M Tarafdar, Bunsen Nie: Dynamic rapid vapor deposition process for conformal silica laminates. Novellus Systems, Beyer Weaver, May 29, 2007: US07223707 (9 worldwide citation)

A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, r ...


10
George D Papasouliotis, Raihan M Tarafdar, Adrianne K Tipton, Ron Rulkens, Dennis M Hausmann, Jeff Tobin: Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry. Novellus Systems, Beyer Weaver, September 18, 2007: US07271112 (9 worldwide citation)

Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enh ...