1
Philip J Kuekes, R Stanley Williams, James R Heath: Molecular wire crossbar memory. Hewlett-Packard, October 3, 2000: US06128214 (485 worldwide citation)

A molecular wire crossbar memory (MWCM) system is provided. The MWCM comprises a two-dimensional array of a plurality of nanometer-scale devices, each device comprising a junction formed by a pair of crossed wires where one wire crosses another and at least one connector species connecting the pair ...


2
Philip J Kuekes, R Stanley Williams: Demultiplexer for a molecular wire crossbar network (MWCN DEMUX). Hewlett Packard Company, July 3, 2001: US06256767 (348 worldwide citation)

A demultiplexer for a two-dimensional array of a plurality of nanometer-scale switches (molecular wire crossbar network) is disclosed. Each switch comprises a pair of crossed wires which form a junction where one wire crosses another and at least one connector species connecting said pair of crossed ...


3
Philip J Kuekes, R Stanley Williams, James R Heath: Molecular-wire crossbar interconnect (MWCI) for signal routing and communications. Hewlett Packard Company, November 6, 2001: US06314019 (251 worldwide citation)

A molecular-wire crossbar interconnect for signal routing and communications between a first level and a second level in a molecular-wire crossbar is provided. The molecular wire crossbar comprises a two-dimensional array of a plurality of nanometer-scale switches. Each switch is reconfigurable and ...


4
Philip J Kuekes, R Stanley Williams: Molecular wire transistor (MWT). Hewlett Packard Development Company, May 6, 2003: US06559468 (143 worldwide citation)

Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provi ...


5
James R Heath, R Stanley Williams, Philip J Kuekes: Chemically synthesized and assembled electronics devices. Hewlett Packard Company, October 1, 2002: US06459095 (126 worldwide citation)

A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nan ...


6
Yong Chen, R Stanley Williams: Nanoscale patterning for the formation of extensive wires. Hewlett Packard Company, June 18, 2002: US06407443 (109 worldwide citation)

A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stack having a major surface parallel to that of ...


7
Yong Chen, R Stanley Williams: Configurable nanoscale crossbar electronic circuits made by electrochemical reaction. Hewlett Packard Company, February 11, 2003: US06518156 (106 worldwide citation)

Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a configurable layer between the lines. Methods are provided for altering the thickness and/or resistance of t ...


8
Yong Chen, R Stanley Williams: Nanoscale patterning for the formation of extensive wires. Hewlett Packard Company, September 25, 2001: US06294450 (99 worldwide citation)

A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stack having a major surface parallel to that of ...


9
Curt A Flory, R Stanley Williams: Quantum wire switch and switching method. Hewlett Packard Company, May 11, 1999: US05903010 (69 worldwide citation)

A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output, a second quantum wire extending from the in ...


10
Yong Chen, Douglas A A Ohlberg, Theodore I Kamins, R Stanley Williams: Formation of nanoscale wires. Hewlett Packard Development Company, August 10, 2004: US06773616 (56 worldwide citation)

Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer ben ...