1
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung LED, McDermott Will & Emery, June 21, 2011: US07964881 (257 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


2
Pun Jae Choi, Yu Seung Kim, Jin Bock Lee: Semiconductor light emitting device. Samsung LED, McDermott Will & Emery, August 30, 2011: US08008683 (254 worldwide citation)

The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an are ...


3
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung LED, McDermott Will & Emery, July 26, 2011: US07985976 (244 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


4
Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho: Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same. Samsung Electronics, McDermott Will & Emery, September 11, 2012: US08263987 (243 worldwide citation)

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semic ...


5
Pun Jae Choi, Jin Hyun Lee, Si Hyuk Lee, Seon Young Myoung, Ki Yeol Park: Light emitting device and package having the same. Samsung LED, McDermott Will & Emery, August 31, 2010: US07786498 (14 worldwide citation)

There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and hig ...


6
Pun Jae Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song: Semiconductor light emitting device. Samsung Electronics, McDermott Will & Emery, August 19, 2014: US08809893 (8 worldwide citation)

The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor la ...


7
Pun Jae Choi, Masayoshi Koike, Lee Jong Ho: Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode. Samsung Electro-Mechanics, McDermott Will & Emery, October 13, 2009: US07601621 (8 worldwide citation)

A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etch ...


8
Grigory Onushkin, Jin Hyun Lee, Myong Soo Cho, Pun Jae Choi: Light emitting device, method of manufacturing the same and monolithic light emitting diode array. Samsung LED, McDermott Will & Emery, February 8, 2011: US07884377 (7 worldwide citation)

A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfa ...


9
Myong Soo Cho, Ki Yeol Park, Sang Yeob Song, Si Hyuk Lee, Pun Jae Choi: Vertical structure LED device and method of manufacturing the same. Samsung LED, McDermott Will & Emery, September 14, 2010: US07795054 (4 worldwide citation)

A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growt ...


10
Pun Jae Choi, Jong Ho Lee: Method of manufacturing vertical gallium nitride-based light emitting diode. Samsung Electro-Mechanics, Lowe Hauptman Ham & Berner, March 30, 2010: US07687376 (3 worldwide citation)

A method of manufacturing a vertical GaN-based LED comprises preparing an n-type GaN substrate; sequentially forming an active layer and a p-type nitride semiconductor layer on the n-type GaN substrate through an epitaxial growth method; forming a p-electrode on the p-type nitride semiconductor laye ...