1
Matthias Bauer
Matthias Bauer, Pierre Tomasini: Inhibitors for selective deposition of silicon containing films. ASM America, Knobbe Martens Olson & Bear, May 10, 2011: US07939447 (51 worldwide citation)

A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between th ...


2
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. ASM America, Knobbe Martens Olson & Bear, July 3, 2007: US07238595 (26 worldwide citation)

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...


3
Matthias Bauer
Matthias Bauer, Chantal Arena, Ronald Bertram, Pierre Tomasini, Nyles Cody, Paul Brabant, Joseph Italiano, Paul Jacobson, Keith Doran Weeks: Selective deposition of silicon-containing films. ASM America, Knobbe Martens Olson & Bear, October 19, 2010: US07816236 (24 worldwide citation)

Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si- ...


4
Matthias Bauer
Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody: Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition. ASM America, Knobbe Martens Olson & Bear, October 21, 2008: US07438760 (21 worldwide citation)

Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 at ...


5
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. ASM America, Knobbe Martens Olson & Bear, October 3, 2006: US07115521 (12 worldwide citation)

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...


6
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. ASM America, Knobbe Martens Olson & Bear, July 22, 2008: US07402504 (9 worldwide citation)

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...


7
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. ASM America, Knobbe Martens Olson & Bear, March 23, 2010: US07682947 (7 worldwide citation)

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...


8
Matthias Bauer
Chantal Arena, Pierre Tomasini, Nyles Cody, Matthias Bauer: Epitaxial growth of relaxed silicon germanium layers. ASM America, Knobbe Martens Olson & Bear, April 7, 2009: US07514372 (4 worldwide citation)

A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buf ...


9
Matthias Bauer
Chantal Arena, Pierre Tomasini, Nyles Cody, Matthias Bauer: Epitaxial growth of relaxed silicon germanium layers. ASM America, Knobbe Martens Olson & Bear, February 23, 2010: US07666799 (3 worldwide citation)

A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buf ...


10
Matthias Bauer
Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody: Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition. ASM America, Knobbe Martens Olson & Bear, January 19, 2010: US07648690 (2 worldwide citation)

Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 at ...