1
Harald Bohlen, Helmut Engelke, Johann Greschner, Peter Nehmiz: Method of compensating the proximity effect in electron beam projection systems. International Business Machines Corporation, T Rao Coca, January 17, 1984: US04426584 (36 worldwide citation)

For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, ...


2
Harald Bohlen, Johann Greschner, Peter Nehmiz: Shadow projection mask for ion implantation and ion beam lithography. International Business Machines Corporation, Sughrue Mion Zinn Macpeak and Seas, May 15, 1984: US04448865 (36 worldwide citation)

A projection mask comprises a thin P.sup.+ -doped silicon layer with through holes adapted to the mask pattern, a grid supporting this layer having silicon ribs. On at least on its side facing away from the grid, the layer has a layer, which is at least as thick as to prevent the implanting of ions ...


3
Harald Bohlen, Johann Greschner, Werner Kulcke, Peter Nehmiz: Alignment system for particle beam lithography. International Business Machines Corporation, Joseph C Redmond Jr, January 25, 1983: US04370554 (26 worldwide citation)

The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam i ...


4
Harald Bohlen, Helmut Engelke, Johann Greschner, Peter Nehmiz: Method of making mask for structuring surface areas. International Business Machines Corporation, T Rao Coca, November 29, 1983: US04417946 (26 worldwide citation)

A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to ...


5
Harald Bohlen, Johann Greschner, Werner Kulcke, Peter Nehmiz: Method of exposure by means of corpuscular beam shadow printing. International Business Machines Corporation, James M Thomson, September 25, 1979: US04169230 (21 worldwide citation)

A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a ...


6
Harald Bohlen, Helmut Engelke, Johann Greschner, Peter Nehmiz: Method of compensating the proximity effect in electron beam projection systems. International Business Machines Corporation, T Rao Coca, March 12, 1985: US04504558 (20 worldwide citation)

For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, ...


7
Harald Bohlen, Erwin Bretscher, Helmut Engelke, Peter Nehmiz, Peter Vettiger, Johann Greschner: Method of transferring a pattern into a radiation-sensitive layer. International Business Machines Corporation, Wolmar J Stoffel, May 27, 1986: US04591540 (20 worldwide citation)

According to this process two partial patterns which, if superimposed upon each other in a predetermined alignment relative to each other yield the desired pattern, with elements of both partial patterns combining to form elements of the pattern, and these partial pattern elements overlapping sectio ...


8
Uwe Behringer, Harald Bohlen, Werner Kulcke, Peter Nehmiz: Electron beam projection lithography. International Business Machines Corporation, Robert E Sandt, November 19, 1985: US04554458 (12 worldwide citation)

The photoresist film 12 on the surface of a wafer 11 is exposed through the shadow pattern which is generated by a transmission mask 13 arranged a short distance therefrom when the mask is subjected to a large-area electron beam. The source of the electron beam is an unstructured photocathode 16 on ...


9
Uwe Behringer, Harald Bohlen, Peter Nehmiz, Werner Zapka: Error-corrected corpuscular beam lithography. International Business Machines Corporation, Francis J Thornton, March 25, 1986: US04578587 (12 worldwide citation)

An apparatus and method for testing transmission masks for corpuscular lithography, in which an image of a portion of mask is guided across a pinhole diaphragm, comprising at least one aperture with submicron dimensions, by inclining the corpuscular beam. The relative spacing of two measuring points ...


10
Harald Bohlen, Helmut Engelke, Johann Greschner, Reinhold Muhl, Peter Nehmiz, Hans J Trumpp: Mask and system for mutually aligning objects in ray exposure systems. International Business Machines Corporation, Graham S Jones II, April 23, 1985: US04513203 (10 worldwide citation)

For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure be ...