1
Lubin Gee, Pearl Cheng, Yogendra Bobra, Rustam Mehta: Intelligent electrically programmable and electrically erasable ROM. Intel Corporation, Blakely Sokoloff Taylor & Zafman, July 17, 1984: US04460982 (160 worldwide citation)

An E.sup.2 PROM is disclosed which provides automatic programming verification. Before data is written into the cells, the cells are automatically erased. The contents of the cells are checked to verify that erasing has been completed. If it has not, erasing is continued until the cells are erased. ...


2
George Chang, Pearl Cheng: Method and apparatus for programming memory devices. Advanced Micro Devices, Raymond Kam On Kwong, June 25, 1996: US05530803 (39 worldwide citation)

A method for programming an integrated memory circuit and an integrated memory circuit structure for storing information are disclosed. The method of programming includes the steps of providing a program mode for programming the memory cells in accordance with total number of memory cells that is re ...


3
Chinh Vo, Harry Shengwen Luan, Pearl Cheng: Reducing bit line leakage current in non-volatile memories. Kilopass Technology, Schwegman Lundberg & Woessner P A, September 8, 2009: US07586787 (6 worldwide citation)

In example embodiments, methods are provided for reducing bit line leakage current. In an example embodiment, an unselected program word line is biased to a bias voltage. The unselected program word line is connected to a memory cell and the memory cell includes a plurality of transistors. In anothe ...


4
Chinh Vo, Harry Shengwen Luan, Pearl Cheng: Reducing bit line leakage current in non-volatile memories. Kilopass Technology, Schwegman Lundberg & Woessner Pa, March 26, 2009: US20090080275-A1

In example embodiments, methods are provided for reducing bit line leakage current. In an example embodiment, an unselected program word line is biased to a bias voltage. The unselected program word line is connected to a memory cell and the memory cell includes a plurality of transistors. In anothe ...


5
George Chang, Pearl Cheng: Method and apparatus for programming memory devices. Advanced Micro Devices, May 21, 1998: TW332292

A method of programming a plurality of memory cells in response to input data type having a plurality of information bits, in which each bit is on first logic level or second logic level, and each memory cell is used to store a bit information, comprises the steps:(1) Providing a program mode for pr ...


6