1
Nathan Kraft, Christopher Boguslaw Kocon, Paul Thorup: Shielded gate trench FET with the shield and gate electrodes being connected together. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, January 15, 2008: US07319256 (58 worldwide citation)

A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. The trench extends in an active region of the FET, and the shield electrode and gate e ...


2
Paul Thorup, Ashok Challa, Bruce Douglas Marchant: High density trench FET with integrated Schottky diode and method of manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, November 4, 2008: US07446374 (44 worldwide citation)

A monolithically integrated trench FET and Schottky diode includes a pair of trenches terminating in a first silicon region of first conductivity type. Two body regions of a second conductivity type separated by a second silicon region of the first conductivity type are located between the pair of t ...


3
Nathan Kraft, Christopher Boguslaw Kocon, Paul Thorup: Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, January 6, 2009: US07473603 (22 worldwide citation)

A method of forming a field effect transistor includes the following steps. A trench is formed in a semiconductor region, and a shield dielectric layer lining lower sidewalls and a bottom surface of the trench is formed. A shield electrode is formed in a lower portion of the trench, and a dielectric ...


4
Nathan Kraft, Christopher Boguslaw Kocon, Paul Thorup: Shielded gate trench FET with the shield and gate electrodes connected together in non-active region. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, December 28, 2010: US07859047 (15 worldwide citation)

A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. A body region extends between each pair of adjacent trenches, and source regions exten ...


5
Paul Thorup, Ashok Challa, Bruce Douglas Marchant: Method of forming high density trench FET with integrated Schottky diode. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, May 11, 2010: US07713822 (9 worldwide citation)

A method of forming a monolithically integrated trench FET and Schottky diode includes the following steps. Two trenches are formed extending through an upper silicon layer and terminating within a lower silicon layer. The upper and lower silicon layers have a first conductivity type. First and seco ...


6
Christopher Boguslaw Kocon, Steven Sapp, Paul Thorup, Dean Probst, Robert Herrick, Becky Losee, Hamza Yilmaz, Christopher Lawrence Rexer, Daniel Calafut: Field effect transistor and schottky diode structures. Fairchild Semiconductor Corporation, March 25, 2014: US08680611 (6 worldwide citation)

In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a sourc ...


7
Paul Thorup, Christopher Lawrence Rexer: High density FET with integrated Schottky. Fairchild Semiconductor Corporation, April 1, 2014: US08686493 (5 worldwide citation)

A semiconductor structure includes a monolithically integrated trench FET and Schottky diode. The semiconductor structure further includes a plurality of trenches extending into a semiconductor region. A stack of gate and shield electrodes are disposed in each trench. Body regions extend over the se ...


8
Yeeheng Lee, Lingpeng Guan, Hongyong Xue, Yiming Gu, Yang Xiang, Terence Huang, Sekar Ramamoorthy, Wenjun Li, Hong Chang, Madhur Bobde, Paul Thorup, Hamza Yilmaz: Split-gate trench power MOSFET with protected shield oxide. Alpha and Omega Semiconductor Incorporated, Joshua D Isenberg, JDI Patent, March 8, 2016: US09281368 (5 worldwide citation)

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. Each gate trench has a first conductive material in lower portions and a second conductive material in upper portions. In the gate trenches, a ...


9
Dixie Dunn, Paul Thorup, Dean E Probst, Michael D Gruenhagen: Shield contacts in a shielded gate MOSFET. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, May 31, 2011: US07952141 (2 worldwide citation)

A semiconductor structure comprises an active region comprising trenches extending into a semiconductor region. Each trench includes a shield electrode and a gate electrode. The semiconductor structure also comprises a shield contact region adjacent to the active region. The shield contact region co ...


10
Dixie Dunn, Paul Thorup, Dean E Probst, Michael D Gruenhagen: Shield contacts in a shielded gate MOSFET. Fairchild Semiconductor Corporation, December 25, 2012: US08338285 (1 worldwide citation)

A semiconductor structure is formed as follows. Trenches are formed in a semiconductor region and a shield electrode is formed in each trench. Gate electrodes are formed in a portion of the trenches that form an active region. Each gate electrode is disposed over the shield electrode and is isolated ...