1
Mark G Johnson, Thomas H Lee, Vivek Subramanian, Paul Michael Farmwald, James M Cleeves: Vertically stacked field programmable nonvolatile memory and method of fabrication. Matrix Semiconductor, Blakely Sokoloff Taylor & Zafman, March 7, 2000: US06034882 (945 worldwide citation)

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. ...


2
Mark G Johnson, Thomas H Lee, Vivek Subramanian, Paul Michael Farmwald, James M Cleeves: Vertically stacked field programmable nonvolatile memory and method of fabrication. Matrix Semiconductor, Brinks Hoffer Gilson & Lione, November 19, 2002: US06483736 (294 worldwide citation)

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for cont ...


3
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Monolithic three dimensional array of charge storage devices containing a planarized surface. Matrix Semiconductor, Foley & Lardner, April 19, 2005: US06881994 (250 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


4
Mark G Johnson, Thomas H Lee, Vivek Subramanian, Paul Michael Farmwald, James M Cleeves: Integrated circuit structure including three-dimensional memory array. Matrix Semiconductor, Zagorin O&apos Brien & Graham, May 7, 2002: US06385074 (83 worldwide citation)

An integrated circuit device includes a three-dimensional memory array and array terminal circuitry for providing to selected memory cells of the array a write voltage different from a read voltage. Neither voltage is necessarily equal to a VDD power supply voltage supplied to the integrated circuit ...


5
Mark G Johnson, Thomas H Lee, Vivek Subramanian, Paul Michael Farmwald: Vertically stacked field programmable nonvolatile memory and method of fabrication. Matrix Semiconductor, Brinks Hofer Gilson & Lione, August 24, 2004: US06780711 (24 worldwide citation)

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for cont ...


6
Thomas H Lee, Vivek Subramanian, James M Cleeves, Igor G Kouznetsov, Mark G Johnson, Paul Michael Farmwald: Dense arrays and charge storage devices. Sandisk 3D, The Marbury Law Group PLLC, October 7, 2014: US08853765 (17 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


7
Mark G Johnson, Thomas H Lee, Vivek Subramanian, Paul Michael Farmwald, James M Cleeves: Vertically stacked field programmable nonvolatile memory and method of fabrication. SanDisk 3D, Dugan & Dugan PC, June 26, 2012: US08208282 (14 worldwide citation)

A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a program ...


8
Thomas H Lee, Vivek Subramanian, James M Cleeves, Mark G Johnson, Paul Michael Farmwald, Igor G Kouznetzov: Dense arrays and charge storage devices. SanDisk 3D, The Marbury Law Group PLLC, March 17, 2015: US08981457 (13 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


9
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Dense arrays and charge storage devices, and methods for making same. Foley & Lardner, Washington Harbour, March 7, 2002: US20020028541-A1 (11 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


10
Mark G Johnson, Thomas H Lee, Vivek Subramanian, Paul Michael Farmwald, James M Cleeves: Vertically stacked field programmable nonvolatile memory and method of fabrication. SanDisk 3D, Dugan & Dugan PC, August 6, 2013: US08503215 (2 worldwide citation)

A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.