1
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Method to deposit SiOCH films with dielectric constant below 3.0. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, January 22, 2002: US06340628 (92 worldwide citation)

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO


2
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Dielectric films with low dielectric constants. Beyer Weaver & Thomas, June 10, 2003: US06576345 (47 worldwide citation)

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like ...


3
George D Papasouliotis, Ashima B Chakravarti, Richard A Conti, Laertis Economikos, Patrick A Van Cleemput: High throughput chemical vapor deposition process capable of filling high aspect ratio structures. Novellus Systems, International Business Machines Corporation, Tom Chen, Skjerven Morrill MacPherson Franklin & Friel, February 29, 2000: US06030881 (278 worldwide citation)

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to qu ...


4
Patrick A Van Cleemput, George D Papasouliotis, Mark A Logan, Bart van Schravendijk, William J King: Very high aspect ratio gapfill using HDP. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, May 28, 2002: US06395150 (218 worldwide citation)

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposi ...


5
Patrick A Van Cleemput, Thomas W Mountsier: High aspect ratio gapfill process by using HDP. Novellus Systems, David E Steuber, Tom Chen, Skjerven Morrill MacPherson Franklin & Friel, February 16, 1999: US05872058 (204 worldwide citation)

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resu ...


6
Adrianne K Tipton, Brian G Lu, Patrick A Van Cleemput, Michelle T Schulberg, Qingguo Wu, Haiying Fu, Feng Wang: Method of porogen removal from porous low-k films using UV radiation. Novellus Systems, Beyer Weaver & Thomas, April 24, 2007: US07208389 (104 worldwide citation)

Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-ox ...


7
Feng Wang, Michelle T Schulberg, Jianing Sun, Raashina Humayun, Patrick A Van Cleemput: Plasma detemplating and silanol capping of porous dielectric films. Novellus Systems, Beyer Weaver & Thomas, February 13, 2007: US07176144 (81 worldwide citation)

Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielec ...


8
Dennis M Hausmann, Adrianne K Tipton, Patrick A Van Cleemput, Bunsen Nie, Francisco J Juarez, Teresa Pong: Properties of a silica thin film produced by a rapid vapor deposition (RVD) process. Novellus Systems, Beyer Weaver & Thomas, March 15, 2005: US06867152 (40 worldwide citation)

A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectr ...


9
Sanjay Gopinath, Patrick A Van Cleemput, Francisco Juarez, Krishnan Shrinivasan: Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing. Novellus Systems, Beyer Weaver & Thomas, April 22, 2003: US06550484 (39 worldwide citation)

The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is ...


10
Patrick A Van Cleemput: Methods and apparatus to control pressure in a supercritical fluid reactor. Novellus Systems, Beyer Weaver & Thomas, July 27, 2004: US06766810 (34 worldwide citation)

The present invention pertains to methods and apparatus for controlling the pressure in a supercritical processing system. Active methods for controlling the pressure include anticipating a pressure deviation due to a solute addition to a system, and changing the pressure within the system to compen ...