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Park Dae Gyu: Method for manufacturing transistor of semiconductor device. Hynix Semiconductor, July 11, 2001: KR1019990065059 (1 worldwide citation)

PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to protect sidewalls of a gate electrode by an aluminum oxide layer(Al2O3) in order to prevent the gate electrode from being oxidized. CONSTITUTION: At first, a gate oxide layer(13) and a gate electrode(14) are se ...


2
Yoo Byoung Ok, Hong Kwon Pyo, Choo Young Sun, Kim Do Sic, Jung Yang Hong, Kim Hee Moon, Kim Ki Ha, Oh Wan Ho, Baik Seung Je, Ahn Sang Bok, Park Dae Gyu: De-cladding machine for irradiated nuclear fuel, capable of performing process without radioactive irradiation by using remote automation process. Korea Atomic Energy Research Institute, August 31, 2007: KR1020060059104 (1 worldwide citation)

PURPOSE: A de-cladding machine for irradiated nuclear fuel is provided to cut a metal nuclear fuel rod or de-clad with a different width by exchanging a bite inside a hot cell. CONSTITUTION: A de-cladding machine for irradiated nuclear fuel includes a base(10), a workpiece clamping unit(20), a workp ...


3
Park Dae Gyu, Cho Heung Jae, Lim Kwan Yong: Method of forming a metal gate in a semiconductor device. Hynix Semiconductor, January 1, 2003: TW516131 (1 worldwide citation)

A method for forming a metal gate capable of preventing degradation in a characteristic of a gate insulating film upon formation of the metal gate. The method of forming the metal gate comprises the steps of providing a silicon substrate having device isolation films of a trench shape for defining a ...


4
Chudzik Michael P, He Wei, Mo Renee T, Moumen Naim, Narayanan Vijay, Park Dae Gyu, Paruchuri Vamsi K: Strained metal gate structure for cmos devices with improved channel mobility and methods of forming the same. International Business Machines Corporation, Chudzik Michael P, He Wei, Mo Renee T, Moumen Naim, Narayanan Vijay, Park Dae Gyu, Paruchuri Vamsi K, GOODWIN Kerry B, September 4, 2008: WO/2008/106244 (1 worldwide citation)

A gate structure (200) for complementary metal oxide semiconductor (CMOS) devices includes a first gate stack (116) having a first gate dielectric layer (102) formed over a substrate (100), and a first metal layer (106) formed over the first gate dielectric layer. A second gate stack (118) includes ...


5
CHAN KEVIN K, DUBE ABHISHEK, HOLT JUDSON R, JOHNSON JEFFREY B, LI JINGHONG, PARK DAE GYU, ZHU ZHENGMAO: [en] Delta monolayer dopants epitaxy for embedded source/drain silicide. IBM, March 13, 2013: GB2494608-A

[en] Semiconductor structures are disclosed that have embedded stressor elements therein. The disclosed structures include at least one FET gate stack (18) located on an upper surface of a semiconductor substrate (12). The at least one FET gate stack includes source and drain extension regions (28) ...


6
CHAN KEVIN K, DUBE ABHISHEK, HOLT JUDSON, LI JINGHONG, NEWBURY JOSEPH, ONTALUS VIOREL, PARK DAE GYU, ZHU ZHENGMAO: [en] Monolayer dopant embedded stressor for advanced cmos. IBM, January 2, 2013: GB2492524-A

[en] Semiconductor structures are disclosed that have embedded stressor elements therein. The disclosed structures include an FET gate stack 18 located on an upper surface of a semiconductor substrate 12. The FET gate stack includes source and drain extension regions 28 located within the semiconduc ...


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Lee Ii Ock, Park Suk In, Park Dae Gyu: Four a lit fluidise a deux etages pour la prereduction de fines de fer et procede associe, 2-stage fluidized bed furnace for pre-reducing fine iron ore and method for pre-reducing fine iron ore using the furnace. Research Institute Of Industrial Science & Technology, Voest Alpine Industrieanlagenbau, Pohang Iron & Steel, Research Institute Of Industrial Science & Technology, Voest Alpine Industrieanlagenbau, Pohang Iron & Steel, ROBIC, July 3, 1997: CA2211906

The 2-stage fluidized bed furnace for pre-reducing a fine iron ore of the present invention comprises a first stage fluidized bed furnace for receiving the fine iron ore from storage hopper, discharging medium/small particles to the upper part thereof, and reducing a coarse particle ore while formin ...


9
Zhu Wenjuan, Chudzik Michael P, Gluschenkov Oleg, Park Dae Gyu, Sekiguchi Akihisa: Ultra-thin hf-doped-silicon oxynitride film for high performance cmos applications and method of manufacture. Ibm, kangjian zhong, April 2, 2008: CN200680011514

A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controUing stable material on top of a base gate dielectric layer (53), and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the struct ...


10
Zhu Wenjuan, Chudzik Michael P, Gluschenkov Oleg, Park Dae Gyu, Sekiguchi Akihisa: Ultra-thin hf-doped silicon oxynitride film for high performance cmos applications and method of manufacture. Ibm, January 2, 2008: EP1872409-A1

A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure ...