1
Pankaj Dixit, Jack Sliwa, Richard K Klein, Craig S Sander, Mohammad Farnaam: Contact plug and interconnect employing a barrier lining and a backfilled conductor material. Advanced Micro Devices, Ashen Golant Martin & Seldon, November 28, 1989: US04884123 (172 worldwide citation)

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion an ...


2
Jack Sliwa, Mohammad Farnaam, Pankaj Dixit, Lewis N Shen: High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism. Advanced Micro Devices, Ashen Golant Martin & Seldon, July 11, 1989: US04847674 (168 worldwide citation)

An interconnect (16', 18', 18"), whose interlevel contacts comprise refractory (10) to refractory or refractory to semiconductor substrate (13) interfaces, comprises patterned refractory core portions (10), consisting of tungsten or molybdenum, having top portions (10a) and opposed side portions (10 ...


3
Pankaj Dixit, Monta R Holzworth, Richard Klein, William P Ingram III: Plug contact with antifuse. Crosspoint Solutions, Townsend and Townsend Khourie and Crew, August 3, 1993: US05233217 (106 worldwide citation)

An antifuse particularly suitable for submicron geometries is presented. The antifuse is formed between a silicon layer, which could be a doped region of the semiconductor substrate, an epitaxial layer or a polysilicon layer, and an upper metal interconnection layer. In contact holes in a silicon di ...


4
Pankaj Dixit, Jack Sliwa, Richard K Klein, Craig S Sander, Mohammad Farnaam: Contact plug and interconnect employing a barrier lining and a backfilled conductor material. Advanced Micro Devices, David W Collins, October 2, 1990: US04960732 (98 worldwide citation)

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion an ...


5
Pankaj Dixit, William P Ingram III, Monta R Holzworth, Richard Klein: Improved method of fabricating antifuses in an integrated circuit device and resulting structure. Crosspoint Solutions, Townsend and Townsend Khourie and Crew, June 21, 1994: US05322812 (65 worldwide citation)

Various improvements in the fabrication of an antifuse having silicon-amorphous silicon-metal layer structure are presented. Included are improved deposition techniques for the amorphous silicon layer. The improvements include steps for the fabrication of such an antifuse without the use of platinum ...


6
Pankaj Dixit: Antifuse with nonstoichiometric tin layer and method of manufacture thereof. Crosspoint Solutions, Townsend and Townsend Khourie and Crew, July 12, 1994: US05329153 (60 worldwide citation)

An antifuse in an integrated circuit which has first and second conducting lines, a semiconductor layer of amorphous silicon between the first and second conducting lines, and a barrier metal layer of TiN between the semiconductor layer and the first conducting layer is disclosed. The TiN layer is n ...


7
John W Sliwa Jr, Pankaj Dixit: Avoiding spin-on-glass cracking in high aspect ratio cavities. Advanced Micro Devices, Benman & Collins, June 2, 1992: US05119164 (59 worldwide citation)

Before spin-on-glass (SOG) is applied and soft-cured over metal traces (10) having a height/width aspect ratio (of the spaces) of at least 1, the aluminum metal traces are selectively coated with selective tungsten (16). After SOG (18) is spun on and soft-cured, it is etched back to expose the metal ...


8
John W Sliwa Jr, Pankaj Dixit: Process for avoiding spin-on-glass cracking in high aspect ratio cavities. Advanced Micro Devices, Benman & Collins, March 9, 1993: US05192715 (44 worldwide citation)

Before spin-on-glass (SOG) is applied and soft-cured over metal traces (10) having a height/width aspect ratio (of the spaces) of at least 1, the aluminum metal traces are selectively coated with selective tungsten (16). After SOG (18) is spun on and soft-cured, it is etched back to expose the metal ...


9
Jack Sliwa, Mohammad Farnaam, Pankaj Dixit, Lewis N Shen: Making a high speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism. Advanced Micro Devices, David W Collins, October 9, 1990: US04962060 (43 worldwide citation)

An interconnect (16',18', 18"), whose interlevel contacts comprise refractory (10) to refractory or refractory to semiconductor substrate (13) interfaces, comprises patterned refractory core portions (10), consisting of tungsten or molybdenum, having top portions (10a) and opposed side portions (10b ...


10
Mu Jing Li, Suryanarayana R Maturi, Pankaj Dixit: Method and apparatus for efficiently locating and automatically correcting certain violations in a complex existing circuit layout. Sun Microsystems, Zagorin O Brien Graham, August 22, 2006: US07096447 (22 worldwide citation)

An exemplary CAD design flow modifies an existing large scale chip layout to reinforce the redundant via design rules to improve the yield and reliability. The flow operates on each metal-via pair from bottom up to locate and correct isolated via rule violations by adding metal features and vias in ...



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