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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: Field effect transistor. Nippon Electric Co, March 19, 2008: EP1901341-A1 (12 worldwide citation)

The present invention provides a field effect transistor exhibiting a good performance at high voltage operation as well as a high frequency characteristic. In the present invention, in a field effect transistor (100) comprising a first field plate electrode (116) and a second field plate electrode ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: Field effect transistor. Nippon Electric Co, March 19, 2008: EP1901342-A1 (11 worldwide citation)

The present invention provides a field effect transistor both exhibiting an excellent performance at high voltage operation as well as a high frequency characteristic. In the present invention, a field effect transistor comprises a layer structure made of compound semiconductor (111) provided on a s ...


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Wakejima Akio, Ota Kazuki, Matsunaga Takaharu, Contrata, Kuzuhara Masaaki: Field effect transistor. NEC, November 29, 2002: JP2002-343814 (10 worldwide citation)

PROBLEM TO BE SOLVED: To realize large current amplitude and a satisfactory high output characteristic in a field effect transistor having an InGaP channel layer.SOLUTION: An electric field control electrode 10 connected to a gate electrode 8 through an insulating film 9 on semiconductor crystal is ...


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Ota Kazuki: Field effect transistor and method of manufacturing the same. NEC, June 19, 2008: JP2008-141040 (10 worldwide citation)

PROBLEM TO BE SOLVED: To provide an enhancement (normally-off) type field effect transistor using a nitride semiconductor which has a structure to obtain a low ON resistance, and to provide a method of manufacturing the same.SOLUTION: A contact layer 105 which consists of AlGaN whose Al composition ...


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Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu: (en) Semiconductor device(ja) 半導体装置. Nec Corporation, Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu, MIYAZAKI Teruoet al, September 17, 2009: WO/2009/113612 (8 worldwide citation)

(EN) Provided is a semiconductor device which has high electron mobility, and superior uniformity and reproducibility of the threshold voltage while reducing the gate leakage current, and can be applied in the enhancement mode. The semiconductor device sequentially deposits a lower barrier layer com ...


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Ota Kazuki, Kawanaka Masafumi: Semiconductor device, field effect transistor, and method for manufacturing same. NEC, July 7, 2005: JP2005-183551 (6 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein gate leakage current reduction and element voltage resistance improvement are achieved without an increase in parasitic resistance.SOLUTION: A buffer layer 102, a channel layer 103, an electron supply layer 104, a barrier layer 105, and ...


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Ota Kazuki: Field effect transistor and its manufacturing method. NEC, August 24, 2006: JP2006-222160 (6 worldwide citation)

PROBLEM TO BE SOLVED: To provide a field effect transistor which reduces a parasitic resistance and to improve the performance and reliability of an element.SOLUTION: The field effect transistor includes a laminate having a channel layer 13 consisting of a nitride semiconductor on a substrate, and a ...


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Kato Takehiko, Ota Kazuki, Miyamoto Hironobu, Iwata Naotaka, Kuzuhara Masaaki: Field effect transistor and its manufacturing method. NEC, September 14, 2001: JP2001-250939 (5 worldwide citation)

PROBLEM TO BE SOLVED: To improve the withstand voltage characteristic of a JFET and realize a stable operation of the JFET.SOLUTION: The field effect transistor having a buffer layer, active layer including a channel layer (e.g. InGaAs) composed of a first conductivity type epitaxially grown layer, ...


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Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: (Ja) 電界効果トランジスタ, (En) Field effect transistor. Nec Corporation, Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori, MIYAZAKI Teruo, December 14, 2006: WO/2006/132418 (5 worldwide citation)

(EN) There is provided a field effect transistor having both preferable high-voltage operation characteristic and high-frequency characteristic. The field effect transistor (100) includes a first field plate electrode (116) and a second filed plate electrode (118). The second field plate electrode ( ...