1
Xavier Baie
Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Jack A Mandelman, Xavier Baie: Stress inducing spacers. International Business Machines Corporation, Jay H Anderson, Eugene I Shkurko, November 30, 2004: US06825529 (145 worldwide citation)

A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both ...


2
Xavier Baie
Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Jack A Mandelman, Xavier Baie: Stress inducing spacers. International Business Machines Corporation, H Daniel Schnurmann, May 20, 2008: US07374987 (17 worldwide citation)

A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both ...


3
Xavier Baie
Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Jack A Mandelman, Xavier Baie: Stress inducing spacers. International Business Machines Corporation, Dept 18g, February 24, 2005: US20050040460-A1

A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both ...


4
Xavier Baie
Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Jack A Mandelman, Xavier Baie: Stress inducing spacers. International Business Machines Corporation, International Business Machines Corporation, Dept 18g, June 17, 2004: US20040113217-A1

A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both ...


5
Michael P Belyansky, Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Oleg Gluschenkov: Structure and method to improve channel mobility by gate electrode stress modification. International Business Machines Corporation, Whitham Curtis & Christofferson P C, Ira D Blecker, December 20, 2005: US06977194 (159 worldwide citation)

In producing complementary sets of metal-oxide-semiconductor (CMOS) field effect transistors, including nFET and pFET), carrier mobility is enhanced or otherwise regulated through the reacting the material of the gate electrode with a metal to produce a stressed alloy (preferably CoSi2, NiSi, or PdS ...


6
Omer H Dokumaci, Woo Hyeong Lee: Transistor having high mobility channel and methods. International Business Machines Corporation, Katherine S Brown, Hoffman Warnick, March 23, 2010: US07682887 (116 worldwide citation)

Methods and resulting structure of forming a transistor having a high mobility channel are disclosed. In one embodiment, the method includes providing a gate electrode including a gate material area and a gate dielectric, the gate electrode being positioned over a channel in a silicon substrate. A d ...


7
Dureseti Chidambarrao, Omer H Dokumaci, Oleg G Gluschenkov: Strained finFETs and method of manufacture. International Business Machines Corporation, Joseph P Abate Esq, Greenblum & Bernstein, April 3, 2007: US07198995 (107 worldwide citation)

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material form a first island and seco ...


8
Meikei Ieong, Omer H Dokumaci, Thomas S Kanarsky, Victor Ku: Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOS. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Joseph P Abate, May 9, 2006: US07041538 (97 worldwide citation)

A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fabricating the same are provided. The adjoining ...


9
Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Jack A Mandelman: Isolation structures for imposing stress patterns. International Business Machines Corporation, Jay H Anderson, Eugene Shkurko, December 13, 2005: US06974981 (95 worldwide citation)

A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate STI fill material. The STI regions are formed in the substrate layer and impose forces on adjacent substrate area ...


10
Dureseti Chidambarrao, Omer H Dokumaci, Oleg G Gluschenkov: Silicon device on Si:C-OI and SGOI and method of manufacture. International Business Machines Corporation, Joseph P Abate, Greenblum & Bernstein, July 24, 2007: US07247534 (69 worldwide citation)

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate ...