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Oglesby Jane V: Mocvd formation of cu2s. Advanced Micro Devices, sCOLLOPY Daniel R, June 10, 2004: WO/2004/048637 (1 worldwide citation)

A system and methodology are disclosed for forming a passive layer (30, 106, 212) on a conductive layer (110, 402, 602, 808). The formation can be done during fabrication of an organic memory cell, where the passive layer (30, 106, 2,12) generally includes a conductivity facilitating compound (106, ...


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Tripsas Nicholas, Buynoski Matthew S, Pangrle Suzette, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, April 19, 2006: GB2419231-A

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette: Spin on polymers for organic memory devices. Advanced Micro Devices, December 14, 2005: GB2415092-A

A method of making organic memory cells (104) made of two electrodes (106, 108) with a controllably conductive media (110) between the two electrodes (106, 108) is disclosed. The controllably conductive media (110) contains an organic semiconductor layer (112) and passive layer (114). The organic se ...


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Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V: Sidewall formation for high density polymer memory element array. Advanced Micro Devices, September 6, 2006: EP1697992-A2

Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cell ...


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Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette: Spin on polymers for organic memory devices. Advanced Micro Devices, Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette, sCOLLOPY Daniel R, February 17, 2005: WO/2005/015635

A method of making organic memory cells (104) made of two electrodes (106, 108) with a controllably conductive media (110) between the two electrodes (106, 108) is disclosed. The controllably conductive media (110) contains an organic semiconductor layer (112) and passive layer (114). The organic se ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V: Sidewall formation for high density polymer memory element array. Advanced Micro Devices, Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V, sDRAKE Paul S, May 19, 2005: WO/2005/045935

Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cell ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, ge bo cheng wei, August 16, 2006: CN200480019684

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...



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