1
Takeshi Miyajima, Norihito Tokura, Kazukuni Hara, Hiroo Fuma: Silicon carbide semiconductor device. Denso Corporation, Pillsbury Madison & Sutro, November 2, 1999: US05976936 (169 worldwide citation)

A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are succe ...


2
Takeshi Miyajima, Norihito Tokura, Kazukuni Hara, Hiroo Fuma: Silicon carbide semiconductor device with trench. Nippondenso, Kabushiki Kaisha Toyota Chuo Kenkyusho, Pillsbury Madison & Sutro, February 1, 2000: US06020600 (114 worldwide citation)

A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are succe ...


3
Kazukuni Hara, Norihito Tokura, Takeshi Miyajima, Hiroo Fuma, Hiroyuki Kano: Process for producing a semiconductor device having a single thermal oxidizing step. Denso Corporation, Pillsbury Madison & Sutro, June 22, 1999: US05915180 (101 worldwide citation)

A semiconductor device, which has an oxide laver with the thickness thereof being varied from portion to portion of the inner surface of a trench and can be easily produced, and a process of producing the same. An n.sup.+ type single crystal SiC substrate is formed of SiC of hexagonal system having ...


4
Norihito Tokura, Naoto Okabe, Naohito Kato: Insulated gate bipolar transistor with reverse conducting current. Nippondenso, Cushman Darby & Cushman, May 21, 1996: US05519245 (84 worldwide citation)

An insulated gate bipolar transistor has a reverse conducting function built therein. A semiconductor layer of a first conduction type is formed on the side of a drain, a semiconductor layer of a second conduction type for causing conductivity modulation upon carrier injection is formed on the semic ...


5
Yuichi Takeuchi, Takeshi Miyajima, Norihito Tokura, Hiroo Fuma, Toshio Murata, Takamasa Suzuki, Shoichi Onda: Silicon carbide semiconductor device and process for manufacturing same. Denso Corporation, Pillsbury Madison & Sutro, October 17, 2000: US06133587 (82 worldwide citation)

A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in th ...


6
Tomonori Kimura, Norihito Tokura, Fumio Ohara, Masahito Mizukoshi: Semiconductor chip package. Denso Corporation, Pillsbury Madison & Sutro, June 6, 2000: US06072240 (61 worldwide citation)

A semiconductor device which improves heat radiation performance and realizes size reduction and enables heat to be radiated swiftly from both of the principal surfaces of a semiconductor chip even when the semiconductor chip has a construction vulnerable to stresses. It comprises several IGBT chips ...


7
Norihito Tokura, Hisasi Kawai: Local area network for vehicle. Nippon Soken, Cushman Darby & Cushman, April 19, 1988: US04739183 (46 worldwide citation)

Disclosed is a local area network for a vehicle which comprises a plurality of terminal stations each having an input/output port for various signals, a main-loop formed by series connection of the terminal stations and transmission lines, a sub-loop arranged in parallel to the main-loop and formed ...


8
Shin Kusase, Kenzo Mitani, Atsushi Umeda, Norihito Tokura, Hirohide Sato: Generator motor for vehicles. Nippondenso, Cushman Darby & Cushman L, August 6, 1996: US05543703 (45 worldwide citation)

A vehicular generator motor performing generator operation and motor operation is disclosed. The generator motor comprises an AC-DC converter means and a switching means. The converter means is composed of a plurality of MOSFETs and connected between each armature coil and a vehicular storage batter ...


9
Takashi Suzuki, Tsutomu Uesugi, Norihito Tokura: Semiconductor device having a vertical type semiconductor element. Denso Corporation, Posz Law Group, January 3, 2006: US06982459 (44 worldwide citation)

A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the ...


10
Yuichi Takeuchi, Takeshi Miyajima, Norihito Tokura, Hiroo Fuma, Toshio Murata: Silicon carbide semiconductor device and process for its production. Denso Corporation, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, April 28, 1998: US05744826 (42 worldwide citation)

A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approxim ...



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