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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, April 19, 2005: US06881632 (64 worldwide citation)

A method of fabricating a CMOS inverter including providing a heterostructure having a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and integrating a pMOSFET and an nMOSFET in said heterostructure, wherein the channel of sai ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs. Amberwave Systems Corporation, Testa Hurwitz & Thibeault, February 20, 2003: US20030034529-A1 (6 worldwide citation)

A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained su ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: CMOS inverter circuits utilizing strained silicon surface channel MOSFETS. Samuels Gauthier & Stevens, September 12, 2002: US20020125471-A1 (3 worldwide citation)

A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1xGex, layer on the Si substrate, and a strained surface layer on said relaxed Si1xGex, layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained su ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs. Samuels Gauthier & Stevens, August 1, 2002: US20020100942-A1 (3 worldwide citation)

A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained su ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs. Amberwave Systems Corporation, Testa Hurwitz & Thibeault, April 22, 2004: US20040075149-A1 (1 worldwide citation)

A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained surf ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel mosfets. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, May 20, 2004: US20040097025-A1 (1 worldwide citation)

A method of fabricating a CMOS inverter including providing a heterostructure having a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and integrating a pMOSFET and an nMOSFET in said heterostructure, wherein the channel of sai ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETs. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, May 19, 2005: US20050106850-A1

A method of fabricating a CMOS inverter including providing a heterostructure having a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and integrating a pMOSFET and an nMOSFET in said heterostructure, wherein the channel of sai ...


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Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: Method of fabricating CMOS inverters and integrated circuits utilizing strained surface channel MOSFETs. AmberWave Systems Corporation, Goodwin Procter, December 7, 2006: US20060275972-A1

A method of fabricating a CMOS inverter including providing a heterostructure having a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and integrating a pMOSFET and an nMOSFET in said heterostructure, wherein the channel of sai ...


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Eugene A Fitzgerald, Nicole Gerrish: Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel mosfets. Samuels Gauthier & Stevens, September 5, 2002: US20020123197-A1 (4 worldwide citation)

A method of fabricating a CMOS inverter including providing a heterostructure having a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and integrating a pMOSFET and an nMOSFET in said heterostructure, wherein the channel of sai ...



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