1
Navneeth Kankani, Charles See Yeung Kwong: System and method for updating a reading threshold voltage based on symbol transition information. SANDISK ENTERPRISE IP, Morgan Lewis & Bockius, January 26, 2016: US09244763 (8 worldwide citation)

The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. The method includes obtaining symbol transition information corresponding to symbol read errors identified while reading data ...


2
Navneeth Kankani, Anand Kulkarni, Charles See Yeung Kwong: Heuristic aware garbage collection scheme in storage systems. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, May 2, 2017: US09639463 (2 worldwide citation)

The various implementations described herein include systems, methods and/or devices used to enable heuristic aware garbage collection in storage systems (e.g., non-volatile data storage systems using one or more flash memory devices). In one aspect, a time parameter (e.g., dwell time) and/or heuris ...


3
Navneeth Kankani, Linh Tien Truong: Variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, March 28, 2017: US09606737 (2 worldwide citation)

Systems, methods, and/or devices are used to implement variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portio ...


4
Navneeth Kankani, Linh Tien Truong: Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, May 2, 2017: US09639282 (2 worldwide citation)

Systems, methods, and/or devices are used to implement variable bit encoding to improve device endurance and extend life of storage devices. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to s ...


5
Navneeth Kankani, Mark A Gaertner, Rodney V Bowman, Ryan J Goss, David S Seekins, Tong Shirh Stone: Methods and devices to increase memory device data reliability. Seagate Technology, Hollingsworth Davis, January 14, 2014: US08631294 (2 worldwide citation)

A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy in ...


6
Linh Tien Truong, Allen Samuels, Navneeth Kankani: Method and system for recharacterizing the storage density of a memory device or a portion thereof. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, May 9, 2017: US09645749 (1 worldwide citation)

A storage system includes a memory controller and a storage device with one or more memory devices, each with a plurality of memory portions. The memory controller determines an initial storage capacity for each of the one or more memory devices, where the one or more memory devices are configured i ...


7
Ryan James Goss, David Scott Seekins, Navneeth Kankani: Sanitizing a non-volatile memory through charge accumulation. Seagate Technology, Hall Estill Attorneys at Law, April 22, 2014: US08705291 (1 worldwide citation)

Method and apparatus for sanitizing a non-volatile memory, such as a flash memory array. In accordance with various embodiments, a memory cell is sanitized by using a write circuit to accumulate charge on a floating gate of the cell to a level such that application of a maximum available read sensin ...


8
Navneeth Kankani, Charles See Yeung Kwong: Write amplification reduction through reliable writes during garbage collection. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, June 7, 2016: US09361221

The various implementations described herein include systems, methods and/or devices used to enable write amplification reduction through reliable writes during garbage collection. In one aspect, lower page/upper page programming is used during write operations performed in response to a host comman ...


9
Navneeth Kankani, Charles See Yeung Kwong: Write amplification reduction by delaying read access to data written during garbage collection. SANDISK ENTERPRISE IP, Morgan Lewis & Bockius, January 12, 2016: US09235509

The various implementations described herein include systems, methods and/or devices used to enable write amplification reduction by delaying read access to data written during garbage collection. In one aspect, read access to a write unit to which data was written during garbage collection is delay ...


10
Navneeth Kankani, Linh Tien Truong: Variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. SanDisk Technologies, Brinks Gilson & Lione, January 9, 2018: US09864525

Systems, methods, and/or devices are used to implement variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portio ...