1
Guldberg Jens, Nathanson Harvey C: Electrostatically deflectable light valve with improved diffraction properties. Westinghouse Electric, Sutcliff W G, May 27, 1975: US3886310 (239 worldwide citation)

An electrostatically deflectable light valve adapted for use in an array for producing television pictures as a projected image upon a large display screen. The light valve structure is such that a plurality of reflective wing portions are free to be deflected along directional axes which are at an ...


2
Nathanson Harvey C, Davis Jr John R: Electrostatically deflectable light valves for projection displays. Westinghouse Electric Corporation, July 17, 1973: US3746911 (98 worldwide citation)

An electrostatically deflectable light valve for use in large area projection display. The system utilizes an array of electrostatically deflectable reflective elements lying in a plane which provides modulation of a light source directed thereon so as to spatially modulate and produce a display of ...


3
Nathanson Harvey C, Guldberg Jens: Color video display system comprising electrostatically deflectable light valves. Westinghouse Electric Corporation, Sutcliff W G, July 22, 1975: US3896338 (88 worldwide citation)

A color video imaging system utilizing a cathode ray device with a target comprising an array of electrostatically deflectable light valves. The light valve structure and the arrangement of light valves as an array permits sequential activation of the light valves in response to a specific primary c ...


4
Nathanson Harvey C, Thomas Richard N, Guldberg Jens: Solid state radiation sensitive field electron emitter and methods of fabrication thereof. Joseph Lucas, Henson F H, June 4, 1974: US3814968 (55 worldwide citation)

A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted in ...


5
Heng Terrence M S, Nathanson Harvey C, Davis Jr John R: Microwave stripling circuits with selectively bondable micro-sized switches for in-situ tuning and impedance matching. Westinghouse Electric Corporation, Schron D, March 12, 1974: US3796976 (34 worldwide citation)

A microstrip line is divided into a number of short sections, each capacitively coupled to its neighbor by a cantilever switch. The coupling of each switch depends on the separation between sections and the spacing between the catilever switch and an adjoining section. The cantilever switches are su ...


6
Nathanson Harvey C, Thomas Richard N, Guldberg Jens: Solid state radiation sensitive field electron emitter and methods of fabrication thereof. Westinghouse Electric Corporation, Sutcliff W G, July 15, 1975: US3894332 (34 worldwide citation)

A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted in ...


7
Nathanson Harvey C, Green David, Davis Jr John R: Surface gate-induced conductivity modulated negative resistance semiconductor device. Westinghouse Electric Corporation, Menzemer C L, September 2, 1975: US3903542 (26 worldwide citation)

A surface gate-induced semiconductor device is provided which exhibits conductivity modulated transient negative resistance. First and second base electrodes are spaced from each other and make ohmic contact to a semiconductor body adjacent a major surface thereof. An insulator layer with a gate ele ...


8
Gutknecht Peter, Heng Terrence M S, Nathanson Harvey C: Solid state components. Westinghouse Electric Corporation, Hinson J B, December 3, 1974: US3851379 (23 worldwide citation)

There is disclosed a method of making a metal-oxide silicon field-effect transistor (MOSFET) capable of delivering substantial power (5 to 10 watts) in the microwave frequency range (about 5 Gigahertz) and operating as an amplifier over a wide bandwidth through a reasonably high input impedance exce ...


9
Nathanson Harvey C, Davis Jr John R, Kiggins Terence R: Resonant gate transistor with fixed position electrically floating gate electrode in addition to resonant member. Westinghouse Electric Corporation, June 29, 1971: US3590343 (9 worldwide citation)

A resonant gate transistor is provided with a gate electrode with means to bias the gate so that normally off detectors such as P-channel MOSFETs can be employed, such detectors being more compatible with NPN bipolar transistors for integration than normally on N-channel detectors. The gate electrod ...


10
Nathanson Harvey C, Howell Robert S, Saxena Ragini, Storaska Garrett A: Pocket-pen ultra-high resolution mems projection display in combination with on-axis ccd image capture system including means for permitting 3-d imaging. Northrop Grumman Corporation, Nathanson Harvey C, Howell Robert S, Saxena Ragini, Storaska Garrett A, GATES William L, August 25, 2005: WO/2005/077002 (7 worldwide citation)

A small portable 'pocket pen size' (12) projector/image grabber device for allowing an individual to gather, share and exploit information in a projected format in real time, day or night, with other individuals on demand. An ultra high density MEMS (14) mirror display array provides a 1024 x 768 li ...