1
Christian Dussarrat, Jean Marc Girard, Takako Kimura, Naoki Tamaoki, Yuusuke Sato: Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition. L Air Liquide Société Anonyme á Directoire et Conseil de Surveillance pour l Etude et l Exploitation des Procédés Georges Claude, Linda K Russell, Christopher J Cronin, March 20, 2007: US07192626 (52 worldwide citation)

Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than abo ...


2
Yuusuke Sato, Naoki Tamaoki, Toshimitu Ohmine: Method of forming a film in recess by vapor phase growth. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, February 8, 2000: US06022806 (8 worldwide citation)

A wafer having a recess with an aspect ratio of 0.5 or above on a surface to be processed is placed on a holder provided within a process chamber. A process gas consisting of a mixture of a material gas of SiH.sub.4 and a carrier gas of H.sub.2 is uniformly supplied to the surface of the wafer verti ...


3
Yuusuke Sato, Takashi Kataoka, Naoki Tamaoki, Toshimitsu Ohmine: Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process. Kabushiki Kaisha Toshiba, Foley & Lardner, April 2, 2002: US06365231 (6 worldwide citation)

The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compoun ...


4
Shinichi Tatsuta, Yuusuke Sato, Naoki Tamaoki, Hiroshi Komiyama, Yasuyuki Egashira: Simulation method with respect to trace object that event occurs in proportion to probability and computer program product for causing computer system to perform the simulation. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, July 20, 1999: US05926402 (5 worldwide citation)

A simulation method for performing a simulation with respect to a trace object that an event occurs depending on a probability in a domain to be analyzed. The simulation method includes the step of dividing a flowing field into cells serving as domains to be analyzed, the step of arranging molecules ...


5
Naoki Tamaoki, Akio Ui, Toshiro Takase, Takashi Ichikawa: Simulating a chemical reaction phenomenon in a semiconductor process. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, October 1, 2013: US08548787 (1 worldwide citation)

A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of mater ...


6
Takashi Ichikawa, Naoki Tamaoki, Toshiro Takase: Simulation method and simulation program. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, June 26, 2012: US08209155 (1 worldwide citation)

A simulation method includes dividing a material surface into finite computational elements, and calculating a deposition rate or etching rate at each of the computational elements to simulate a feature profile of the material surface, the calculating including calculating an indirect effect of a fi ...


7
Akio Ui, Takashi Ichikawa, Naoki Tamaoki, Hisataka Hayashi, Akihiro Kojima: Plasma processing apparatus of substrate and plasma processing method thereof. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, August 28, 2012: US08252193

A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is dis ...


8
Naoki Tamaoki, Yuusuke Sato, Jun Sonobe, Takamitsu Shigemoto, Takako Kimura: Method of cleaning a film-forming apparatus. Kabushiki Kaisha Toshiba, L Air Liquide, Oblon Spivak McClelland Maier & Neustadt L, May 17, 2011: US07942974

A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-fo ...


9
Yuusuke Sato, Takashi Kataoka, Naoki Tamaoki, Toshimitsu Ohmine: Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process. Richard L Schwaab, Foley & Lardner, December 6, 2001: US20010048973-A1

The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compoun ...


10
Naoki Tamaoki, Akio Ui, Toshiro Takase, Takashi Ichikawa: Simulation apparatus, simulation method, and computer program product. Kabushiki Kaisha Toshiba, Oblon Spivak Mcclelland Maier & Neustadt PC, May 24, 2007: US20070118341-A1

A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of mater ...