1
Nakajima Kentaro, Inomata Koichiro, Saito Yoshiaki, Sagoi Masayuki: Magnetic memory device. Tokyo Shibaura Electric Co, June 20, 2001: EP1109170-A2 (42 worldwide citation)

A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions (11, 21) and a switch (31), each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which ...


2
Inomata Koichiro, Nakajima Kentaro, Saito Yoshiaki, Sagoi Masayuki, Kishi Tatsuya: Magnetoresistive element and magnetic memory device. Tokyo Shibaura Electric Co, March 21, 2001: EP1085586-A2 (24 worldwide citation)

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer (11)/a first ferromagnetic layer (12)/a first dielectric layer (13)/a second ferromagnetic layer (14)/a second dielectric layer (15)/a third ferromagnetic layer (16)/a ...


3
Nakajima Kentaro, Inomata Koichiro, Saito Yoshiaki, Sunai Masayuki: Magnetic memory device. Toshiba, August 31, 2001: JP2001-236781 (23 worldwide citation)

PROBLEM TO BE SOLVED: To enable enlarging output voltage of a cell at the read-out time, to enable improving a signal to noise ratio without increasing power consumption at the read-out time and to realize low power consumption and high speed read-out.SOLUTION: This device is a magnetic memory devic ...


4
Saito Yoshiaki, Nakajima Kentaro, Inomata Koichiro, Sunai Masayuki, Kishi Tatsuya: Magneto-resistance effect element and magnetic recording element. Toshiba, June 8, 2001: JP2001-156357 (19 worldwide citation)

PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element wherein the increase of an applied voltage for a desired output voltage value causes less decrease in magneto-resistance change ratio, no writing rotates the magnetic moment of a part of the magnetization adhesion layer for gradual ...


5
Kishi Tatsuya, Takahashi Shigeki, Nakajima Kentaro, Amano Minoru, Sunai Masayuki, Saito Yoshiaki: Magnetoresistive effect element and its manufacturing method, magnetic random access memory, portable terminal apparatus, magnetic head, and magnetic reproduction apparatus. Toshiba, September 27, 2002: JP2002-280637 (17 worldwide citation)

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element that is magnetically stabilized, and has a reduced switching magnetic field, and to provide a method for manufacturing a magnetoresistive effect element.SOLUTION: The width of an element end section is widened as compared with a cent ...


6
Inomata Koichiro, Nakajima Kentaro, Saito Yoshiaki: Magnetic element, memory, magnetic reproduction head, and magnetic disc drive. Toshiba, November 30, 2000: JP2000-332317 (17 worldwide citation)

PROBLEM TO BE SOLVED: To obtain a magnetic element in which high spin storage effect can be expected by providing semiconductor particles abutting on a second ferromagnetic layer through a second tunnel barrier having conductance different from that of a first tunnel barrier. SOLUTION: A pair of ele ...


7
Saito Yoshiaki, Inomata Koichiro, Amano Minoru, Sunai Masayuki, Nakajima Kentaro, Takahashi Shigeki, Kishi Tatsuya: Magnetic memory device. Toshiba, April 12, 2002: JP2002-110938 (16 worldwide citation)

PROBLEM TO BE SOLVED: To provide a magnetic memory device which is reduced in power consumption at writing.SOLUTION: This magnetic memory includes first and second wirings 14, 15 crossing each other and separated from each other; a magnetoresistive effect film 13 positioned in a region where the fir ...


8
Sunai Masayuki, Saito Yoshiaki, Nakajima Kentaro, Amano Minoru: Magnetoresistance effect element, magnetic memory, magnetic head, and magnetic reproducing apparatus. Toshiba, July 19, 2002: JP2002-204004 (12 worldwide citation)

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element, a magnetic memory, a magnetic head, and a magnetic reproducing apparatus capable of maintaining high enough magneto-resistance ratio and preventing increase of inverting magnetic field even for reduced size.SOLUTION: The magnetores ...


9
Nakajima Kentaro, Amano Minoru, Ueda Tomomasa, Takahashi Shigeki: Magnetic memory device and its manufacturing method. Toshiba, February 17, 2005: JP2005-044848 (12 worldwide citation)

PROBLEM TO BE SOLVED: To provide a magnetic memory device which is equipped with a magneto tunneling junction (MTJ) element that is formed by ion etching, very reliable, and kept almost free from an initial failure, and to provide a method of manufacturing the same.SOLUTION: An MTJ element 30 is for ...


10
Nakajima Kentaro, Inomata Koichiro: Magnetic memory device. Toshiba, November 30, 2000: JP2000-331473 (11 worldwide citation)

PROBLEM TO BE SOLVED: To make it possible to increase a capacity as large as possible and to embody a high speed and lower electric power consumption. SOLUTION: The magnetic memory device has plural memory cells possessed by the respective layers of an element 10 having ferromagnetic multiple tunnel ...