1
Susanna R Carbaugh, Hung Y Ng, Murty S Polavarapu, David Stanasolovich: Selective and anisotropic dry etching. International Business Machines Corporation, Jeffrey S LaBaw, John E Hoel, Maurice H Klitzman, March 29, 1988: US04734157 (32 worldwide citation)

A composition and method for anistropically etching polysilicon or silicides with excellent selectivity to an underlying layer of an oxide or nitride of silicon is disclosed. A mixture of CClF.sub.3 or CCl.sub.2 F.sub.2 and ammonia is employed at moderate pressures in a reactive ion etching chamber.


2
Paul E Nixon, Murty S Polavarapu, David Stanasolovich: Process using dry etchant to avoid mask-and-etch cycle. International Business Machines Corporation, Manny W Schecter, John E Hoel, Maurice H Klitzman, November 25, 1986: US04624739 (12 worldwide citation)

A process is disclosed for simultaneously etching holes in both the thick and thin portions of a dielectric layer on a semiconductor substrate. An anisotropic dry etchant is used to eliminate any significant lateral etching of the dielectric layer during etching. Thus, a mask-and-etch cycle may be e ...


3
Frederick T Brady, Murty S Polavarapu: Semiconductor circuit having increased susceptibility to ionizing radiation. BAE Systems Information & Electronic Systems Integration, DeMont & Breyer, December 16, 2003: US06665161 (9 worldwide citation)

A radiation-susceptible integrated circuit comprises radiation sensor, a differential amplifier and circuit disabler. The radiation sensor includes two devices that have a different tolerance to ionizing radiation. When exposed to a total dose of ionizing radiation that exceeds the radiation toleran ...


4
Jonathan Maimon, Murty S Polavarapu: Integrated resistor having aligned body and contact and method for forming the same. BAE Systems Information and Electrical Systems Integration, Daniel J Long, Graybeal Jackson Haley, September 24, 2002: US06455392 (6 worldwide citation)

An integrated resistor includes a resistor body region and a resistor contact region that is aligned with the body region. Because the resistor includes an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value. A method for formi ...


5
Murty S Polavarapu, Jon Maimon: Integrated circuit capable of operating at two different power supply voltages. BAE Systems Information and Electronic Systems Integration, Antony P Ng, Bracewell & Patterson L, October 22, 2002: US06468860 (5 worldwide citation)

A method for manufacturing an integrated circuit having high voltage transistors and low voltage transistors is disclosed. First, lightly doped drains are formed in both high voltage transistors and low voltage transistors within the integrated circuit. A thin layer of silicon nitrate film is then d ...


6
Frederick T Brady, Nadim Haddad, Murty S Polavarapu: Semiconductor device and circuit having low tolerance to ionizing radiation. BAE SYSTEMS Information and Electronic Systems Integration, DeMont & Breyer, August 27, 2002: US06441440 (3 worldwide citation)

Semiconductor devices and integrated circuits that benefit from the advantages of contemporary processing technologies yet are irreparably damaged by ionizing radiation, and methods for making the same. Transistors that are particularly intolerant to ionizing radiation have a gate insulator that inc ...


7
Frederick T Brady, Murty S Polavarapu: Increasing the susceptability of an integrated circuit to ionizing radiation. BAE Systems, DeMont & Breyer, September 21, 2004: US06794733 (2 worldwide citation)

In integrated circuit that yields the advantages of contemporary processing technologies and yet is irreparably damaged by ionizing radiation. An integrated circuit is designed and fabricated with contemporary processing technologies in well-known fashion, except that certain devices, called “safegu ...


8
Murty S Polavarapu, Nadim F Haddad: Method for implementing prompt dose mitigating capacitor. BAE Systems Information and Electronic Systems Integration, Russell Ng PLLC, Anthony Ng, May 12, 2015: US09027226

A method for implementing a prompt dose mitigating capacitor is disclosed. Initially, a flip chip is provided with multiple capacitors. The flip chip is then placed on top of a substrate having multiple electronic devices connected to a set of power rails. The terminals of the capacitors within the ...


9
Murty S Polavarapu, Andrew T S Pomerene: Three-dimensional electronic photonic integrated circuit fabrication process. BAE Systems Information and Electronic Systems Integration, Maine Cernota & Rardin, Scott J Asmus, August 16, 2016: US09417383

A device and the process for creating a three-dimensional electronic photonic circuit is disclosed. The process includes fabricating a standard high performance integrated circuit on a high resistivity silicon or a silicon-on-insulator substrate up to and including the passivation layer on top of tr ...


10
Jonathan Maimon, Murty S Polavarapu: Integrated resistor having aligned body and contact and method for forming the same. BAE SYSTEMS Information and Electronics Systems Integration, Bryan A Santarelli, Graybeal Jackson Haley, October 18, 2001: US20010030885-A1

An integrated resistor includes a resistor body region and a resistor contact region that is aligned with the body region. Because the resistor includes an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value. A method for formi ...