1

2
Brodsky Stephen B, Moy Dan, Joshi Raily V: Gate structure in semiconductor devices.. Ibm, December 21, 1988: EP0295367-A1 (5 worldwide citation)

A gate structure for integrated circuit devices which includes a work function layer (13), a low resistivity layer (17), and an electrically conductive barrier layer (14) between the two other layers to prevent the other two layers from intermixing. The work function controlling layer (13) is prefer ...


3
Joshi Rajiy V, Oh Choon Sik, Moy Dan: Method for selective deposition of refractory metals on silicon substrates and device formed thereby.. Ibm, July 11, 1990: EP0377137-A1 (3 worldwide citation)

Selective deposition of a refractory metal on a silicon substrate utilizing high temperatures and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utiliz ...


4

5
Brodsky Stephen B, Moy Dan, Joshi Rajiv V: Portillon electronique multicouche en siliciures metalliques, avec barrage intercalaire, Stacked metal silicide gate structure with barrier. International Business Machines Corporation, Brodsky Stephen B, Moy Dan, Joshi Rajiv V, ROSEN ARNOLD, August 28, 1990: CA1273439

YO986-082 ABSTRACT OF THE DISCLOSURE A gate structure for integrated circuit deviceswhich includes a work function layer, a low resistivitylayer, and an electrically conductive barrier layerbetween the two other layers to prevent the other twolayers from intermixing. The work function controllinglay ...


6
Kwark Young Hoon, Moy Dan, Ritter Mark, Rogers Dennis, Welser Jeffrey: (soi) Trench photodiode and method of forming same. Ibm, January 2, 2004: EP1374318-A2

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby al ...


7
Kwark Young Hoon, Moy Dan, Ritter Mark, Rogers Dennis, Welser Jeffrey John: (soi) Trench photodiode and method of forming same. International Business Machines Corporation, IBM United Kingdom, BURT Roger James, April 11, 2002: WO/2002/029903

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby al ...


8
Kwark Young H, Moy Dan, Ritter Mark B, Rogers Dennis L, Welser Jeffrey J: (soi) Trench photodiode and method of forming same. International Business Machines Corporation, May 11, 2003: TW531899

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby al ...


9
Kwark Young Hoon, Moy Dan, Ritter Mark, Rogers Dennis, Welser Jeffrey John: (soi) Trench photodiode and method of forming same. International Business Machines Corporation, June 9, 2003: KR1020037004555

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby al ...


10