1
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, March 12, 2007: KR1020067025149

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


2
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor simultaneously with aluminum metal wiring level using a hardmask. Ibm, June 6, 2007: EP1792343-A2

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


3
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor using a hardmask. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara, CANALE Anthony J, December 22, 2005: WO/2005/122245

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


4
DEMUYNCK DAVID, HE ZHONG XIANG, MIGA DANIEL, MOON MATTHEW D, VANSLETTE DANIEL, WHITE ERIC J: [en] Integrated circuit and interconnect, and method of fabricating same. IBM, July 3, 2013: GB2498154-A

[en] The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC (10) includes at least one trench (20) within a dielectric layer (25) disposed on a substrate (30). The trench is confor ...


5
GAMBINO JEFFREY P, MOON MATTHEW D, MURPHY WILLIAM J, NAKOS JAMES S, PASTEL PAUL W, PHILIPS BRETT A: [en] Ferro-electric capacitor modules, methods of manufacture and design structures. IBM, March 6, 2013: GB2494362-A

[en] Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator (18) layer of a CMOS structure (10). The method further includes forming a top plate (32) and a bottom plate ...


6
DeMUYNCK David A, HE Zhong Xiang, MIGA Daniel R, MOON Matthew D, VANSLETTE Daniel S, WHITE Eric J: CIRCUIT INTÉGRÉ ET INTERCONNEXION, ET PROCÉDÉ DE FABRICATION, INTEGRATED CIRCUIT AND INTERCONNECT, AND METHOD OF FABRICATING SAME. INTERNATIONAL BUSINESS MACHINES CORPORATION, DeMUYNCK David A, HE Zhong Xiang, MIGA Daniel R, MOON Matthew D, VANSLETTE Daniel S, WHITE Eric J, CANALE Anthony J, April 12, 2012: WO/2012/047458

The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC (10) includes at least one trench (20) within a dielectric layer (25) disposed on a substrate (30). The trench is conformally ...


7
GAMBINO Jeffrey P, MOON Matthew D, MURPHY William J, NAKOS James S, PASTEL Paul W, PHILIPS Brett A: Modules de condensateurs ferroélectriques, procédés de fabrication et structures de conception, Ferro-electric capacitor modules, methods of manufacture and design structures. International Business Machines Corporation, GAMBINO Jeffrey P, MOON Matthew D, MURPHY William J, NAKOS James S, PASTEL Paul W, PHILIPS Brett A, LESTRANGE Michael J, December 29, 2011: WO/2011/163429

Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator (18) layer of a CMOS structure (10). The method further includes forming a top plate (32) and a bottom plate (28) ...


8
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator-metal capacitor using a hardmask. Ibm, yujing liurui dong, April 25, 2007: CN200580015358

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...