1
Pankaj Dixit, Jack Sliwa, Richard K Klein, Craig S Sander, Mohammad Farnaam: Contact plug and interconnect employing a barrier lining and a backfilled conductor material. Advanced Micro Devices, Ashen Golant Martin & Seldon, November 28, 1989: US04884123 (172 worldwide citation)

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion an ...


2
Jack Sliwa, Mohammad Farnaam, Pankaj Dixit, Lewis N Shen: High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism. Advanced Micro Devices, Ashen Golant Martin & Seldon, July 11, 1989: US04847674 (168 worldwide citation)

An interconnect (16', 18', 18"), whose interlevel contacts comprise refractory (10) to refractory or refractory to semiconductor substrate (13) interfaces, comprises patterned refractory core portions (10), consisting of tungsten or molybdenum, having top portions (10a) and opposed side portions (10 ...


3
Pankaj Dixit, Jack Sliwa, Richard K Klein, Craig S Sander, Mohammad Farnaam: Contact plug and interconnect employing a barrier lining and a backfilled conductor material. Advanced Micro Devices, David W Collins, October 2, 1990: US04960732 (98 worldwide citation)

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion an ...


4
William H Arnold III, Mohammad Farnaam, Jack Sliwa: Titanium nitride as an antireflection coating on highly reflective layers for photolithography. Advanced Micro Devices, Ashen Golant Martin & Sheldon, April 11, 1989: US04820611 (58 worldwide citation)

Reflection of incident optical radiation (18) from a highly reflective metal layer (12), such as aluminum or titanium, into a photoresist layer (14) is reduced by interposing a layer of titanium nitride (16) between the metal and photoresist layers. The thickness of the TiN layer depends on the wave ...


5
Jack Sliwa, Mohammad Farnaam, Pankaj Dixit, Lewis N Shen: Making a high speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism. Advanced Micro Devices, David W Collins, October 9, 1990: US04962060 (43 worldwide citation)

An interconnect (16',18', 18"), whose interlevel contacts comprise refractory (10) to refractory or refractory to semiconductor substrate (13) interfaces, comprises patterned refractory core portions (10), consisting of tungsten or molybdenum, having top portions (10a) and opposed side portions (10b ...



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