1
Imai Hideaki, Miyata Kunio, Hirai Tadahiko City Life Musas: Nitride based semiconductor device and manufacture thereof.. Asahi Chemical, July 27, 1994: EP0607435-A1 (53 worldwide citation)

A nitride based semiconductor device, wherein provided are a substrate (23), a first layer comprising an oriented polycrystalline nitride based semiconductor (24, 29, 32, 35, 39, 45, 46, 49) which is formed directly on the substrate (23) and has a thickness less than 5000 angstrom, operation layers ...


2
Sakaguchi Yasuhiko C O Kawasak, Aratani Fukuo C O Kawasaki Ste, Uchino Kazuhiro C O Kawasaki S, Yoshiyagawa Mitsugi Nippon She, Miyata Kunio Nippon Sheet Glas, Ishizaki Masato Nippon Sheet G, Kawahara Tetsuro Nippon Sheet: Method for producing high-purity metallic silicon and apparatus therefor.. Kawasaki Steel Co, Nippon Sheet Glass, August 30, 1989: EP0329803-A1

A method and apparatus for producing or manufacturing a high purity metallic silicon involve a process for generating silicon monoxide by causing reaction between a silicon dioxide containing material (3) and molten state metallic silicon (12). The silicon monoxide thus generated is sucked (14) for ...


3
Imai Hideaki, Miyata Kunio, Hirai Tadahiko: Dispositif a semiconducteur a base de nitrure et sa methode de fabrication, Nitride based semiconductor device and manufacture thereof. Asahi Kasei Kogyo Kabushiki Kaisha, GOUDREAU GAGE DUBUC, February 8, 1994: CA2120610

A nitride semiconductor device is made using a molecular beam epitaxy crystal growth apparatus having a gas source (7) for supplying a compound including nitrogen in a gaseous state, solid body sources (2, 3, 4) for supplying Group III constituents, and sources (5, 6) for supplying n-type and p-type ...


4
Aratani Fukuo, Uchino Kazuhiro, Sakaguchi Yasuhiko, Ishizaki Masato, Miyata Kunio, Kawahara Tetsuro, Yoshiyagawa Mitsugi: Methode pour la production de silicium metallique tres pur et appareil a cette fin, Method for producing high-purity metallic silicon and apparatus therefor. New Energy And Industrial Technology Development Organization, ROBIC, June 27, 1995: CA1336038

A method and apparatus for producing or manufacturing a high purity metallic silicon takes a process for generating silicon monoxide by causing reaction between a silicon dioxide containing material and molten state metallic silicon. The silicon monoxide thus generated is sucked for reduction by mea ...


5
Imai Hideaki, Miyata Kunio, Hirai Tadahiko: Nitride based semiconductor device and manufacture thereof. Asahi Kasei Kogyo Kabushiki Kaisha, Imai Hideaki, Miyata Kunio, Hirai Tadahiko, TANI Yoshikazu, February 17, 1994: WO/1994/003931

A nitride based semiconductor device, wherein provided are a substrate (23), a first layer comprising an oriented polycrystalline nitride based semiconductor (24, 29, 32, 35, 39, 45, 46, 49) which is formed directly on the substrate (23) and has a thickness less than 5000 angstrom, operation layers ...


6
Sakaguchi Yasuhiko, Aratani Fukuo, Uchino Kazuhiro, Yoshiyagawa Mitsugi, Miyata Kunio, Ishizaki Masato, Kawahara Tetsuro: Method for producing high-purity metallic silicon and apparatus therefor. Kawasaki Steel Corporation, Nippon Sheet Glass, Sakaguchi Yasuhiko, Aratani Fukuo, Uchino Kazuhiro, Yoshiyagawa Mitsugi, Miyata Kunio, Ishizaki Masato, Kawahara Tetsuro, SHIGA Fujiya, August 24, 1989: WO/1989/007578

A method and apparatus for producing or manufacturing a high-purity metallic silicon involve a process for generating silicon monoxide by causing reaction between a silicon dioxide containing material (3) and molten state metallic silicon (12). The silicon monoxide thus generated is sucked (14) for ...


7
Miyata Kunio: Jetting angle of jetting port, sucking angle of suction port, and arrangement of air cleaner head. Miyata Kunio, August 28, 2008: JP2008-194661

PROBLEM TO BE SOLVED: To provide an air cleaner improved in stripping efficiency of attached fine dust and collection efficiency of scattered fine dust, causing no chattering.SOLUTION: Provision of jetting ports 21 with a tilted angle of 60±5° to upper and lower air cleaner heads 19, 20 facilitates ...


8
Miyata Kunio: Cross-sectional structure of single-sided air cleaner head. Miyata Kunio, December 6, 2007: JP2007-318053

PROBLEM TO BE SOLVED: To provide a single-sided air cleaner device capable of removing chattering (abnormal vibration) of a target product, and maintaining minute dust collecting efficiency by providing a structure having one stage double-sided groove processing region or a single-sided processing o ...


9
Miyata Kunio: Cross-sectional structure of double-sided air cleaner head. Miyata Kunio, December 6, 2007: JP2007-318054

PROBLEM TO BE SOLVED: To provide a double-sided air cleaner device capable of removing chattering (abnormal vibration) of a target product and maintaining minute dust collecting efficiency by providing a structure, in which one stage single-sided groove processing or a double-sided groove processing ...


10
Miyata Kunio: Adjustment of tilt angle of jetting port and air quantity of suction port of air cleaner head. Miyata Kunio, April 9, 2009: JP2009-076831

PROBLEM TO BE SOLVED: To solve the problem that the operation rate in production line processes decrease since the conventional air cleaner device has limits in release efficiency of stuck fine dust and collection efficiency of scattered fine dust, and in addition, causes chattering (abnormal vibrat ...