1
Mitsutoshi Miyasaka: Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device. Seiko Epson Corporation, Oliff & Berridge, January 25, 2000: US06017779 (117 worldwide citation)

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450.degree. C., and, after crystallization, k ...


2
Mitsutoshi Miyasaka: Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device. Seiko Epson Corporation, Oliff & Berridge, January 12, 1999: US05858819 (112 worldwide citation)

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450.degree. C., and, after crystallization, k ...


3
Mitsutoshi Miyasaka: Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and method for fabricating solar cells and active matrix liquid crystal devices. Seiko Epson Corporation, Oliff & Berridge, May 23, 2000: US06066516 (82 worldwide citation)

A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perfo ...


4
Mitsutoshi Miyasaka, Hidetada Tokioka, Tetsuya Ogawa: Thin-film semiconductor device fabrication method. Seiko Epson Corporation, Mitsubishi Denki Kabushiki Kaisha, Oliff & Berridge, February 18, 2003: US06521492 (75 worldwide citation)

In the thin-film semiconductor device fabrication method according to the present invention, after forming an amorphous semiconductor film, the film is crystallized in the solid phase state, then a portion of the semiconductor film is molten by irradiating it with a pulsed laser beam having an absor ...


5
Tetsuya Ogawa, Hidetada Tokioka, Yukio Sato, Mitsuo Inoue, Tomohiro Sasagawa, Mitsutoshi Miyasaka: Laser heat treatment method, laser heat treatment apparatus, and semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Seiko Epson Corporation, McDermott Will & Emery, May 20, 2003: US06566683 (67 worldwide citation)

The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed ...


6
Mitsutoshi Miyasaka, Thomas W Little: Process for fabricating a thin film semiconductor device. Seiko Epson Corporation, Spensley Horn Jubas & Lubitz, December 13, 1994: US05372958 (67 worldwide citation)

There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cy ...


7
Mitsutoshi Miyasaka, Yojiro Matsueda, Satoshi Takenaka: Thin-film semiconductor device, and display system using the same. Seiko Epson Corporation, Oliff & Berridge, January 30, 2001: US06180957 (64 worldwide citation)

A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately or less 580° C. and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy and simple fabri ...


8
Mitsutoshi Miyasaka: Fabrication process for thin film transistors in a display or electronic device. Seiko Epson Corporation, Oliff & Berridge, September 26, 2000: US06124154 (64 worldwide citation)

A fabrication process for manufacturing thin film transistor devices is disclosed. The method encompasses a low temperature process as well as a high temperature process with the collective process characterized by 4 inter-related process steps. In the first process step, a semiconductor layer is fo ...


9
Mitsutoshi Miyasaka, Takao Sakamoto: Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device. Seiko Epson Corporation, Mitsubishi Denki Kabushiki Kaisha, Oliff & Berridge, June 18, 2002: US06407012 (59 worldwide citation)

The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxid ...


10
Mitsutoshi Miyasaka, Yojiro Matsueda, Satoshi Takenaka: Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition. Seiko Epson Corporation, Oliff & Berridge, October 26, 2004: US06808965 (44 worldwide citation)

A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately 530° C. or less and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy-and simple fabri ...