1
Mitsuteru Kimura: Piezo-electricity generation device. Mitsuteru Kimura, Ricoh Seiki Company, McDermott Will & Emery, September 1, 1998: US05801475 (96 worldwide citation)

A piezo-electricity generation device without an external power supply unit includes a rectifying means which rectifies an AC voltage generated by the vibration of at least one piezo-electric plate. An accumulating means accumulates an electric charge outputted through the rectifying means. A voltag ...


2
Mitsuteru Kimura: Gas detector. Ricoh, Burgess Ryan and Wayne, August 10, 1982: US04343768 (64 worldwide citation)

A gas detector of the type using an electric heater in which a substrate consists of an upper film of electrically insulating substance having a resistance to heat and a lower film of substance different from the substance of the upper film, a recess is formed below or under the upper film by removi ...


3
Mitsuteru Kimura: MOS gate Schottky tunnel transistor and an integrated circuit using the same. McDermott Will & Emery, March 5, 2002: US06353251 (49 worldwide citation)

On a Schottky tunnel junction with Schottky metal as a source, an extremely thin and a high density impurities semiconductor layer having a conduction type different from that of a high density impurities semiconductor constituting the base junction is formed, and height and width of this extremely ...


4
Mitsuteru Kimura: Tunnel transistor. Mitsuteru Kimura, Ricoh Seiki Company, Lowe Price LeBlanc & Becker, September 3, 1996: US05552622 (45 worldwide citation)

The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which ...


5
Kiyoshi Komatsu, Takehisa Mori, Atsushi Sone, Mitsuteru Kimura: Infrared sensor and method for production thereof. Terumo Kabushiki Kaisha, Burns Doane Swecker & Mathis, May 28, 1996: US05521123 (41 worldwide citation)

The disclosed infrared sensor comprises a substrate provided with a bridging part and a sensing part made of an infrared temperature-sensitive film formed on the bridging part. A first lid member covers the sensing part and bridging part and a second lid member covers the reverse surface of the subs ...


6
Kiyoshi Komatsu, Takehisa Mori, Atsushi Sone, Mitsuteru Kimura: Infrared sensor and method for production thereof. Terumo Kabushiki Kaisha, Burns Doane Swecker & Mathis, March 14, 1995: US05397897 (34 worldwide citation)

An infrared sensor including a substrate provided with a bridging part; a detecting part composed of an infrared temperature-sensitive film formed in the bridging part; an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to the infr ...


7
Mitsuteru Kimura: Thermal analyzer and a method of measuring with the same. Ricoh Company, Olbon Spivak McClelland Maier & Neustadt P C, December 18, 2001: US06331074 (25 worldwide citation)

A thermal analyzer scans temperature by thermally altering a sample and measuring a thermal change based on physical and chemical changes of the sample as a function of time and/or temperature. The thermal analyzer includes a heat-generating section for heating a sample. The heat-generating section ...


8
Mitsuteru Kimura, Kenji Udagawa: Thermal infrared sensors, imaging devices, and manufacturing methods for such sensors. Nikon Corporation, Klarquist Sparkman Ca mpbell Leigh & Whinston, March 7, 2000: US06034374 (16 worldwide citation)

Thermal infrared sensors are disclosed for the detection of an incident infrared flux. The sensors include an absorber each including an absorption layer and a thermal sensing element. The incident infrared flux is absorbed by the absorption layer. Heat generated by the absorption is detected by the ...


9
Yukito Sato, Mitsuteru Kimura, Hiroyoshi Shoji: Flow sensor having first and second temperature detecting portions for accurate measuring of a flow rate and a manufacturing method thereof. Ricoh Company, Ricoh Elemex Corporation, Ricoh Seiki Company, Mitsuteru Kimura, Oblon Spivak McClelland Maier & Neustadt P C, June 9, 1998: US05763775 (15 worldwide citation)

A flow sensor eliminates turbulence of fluid flow due to a structure of the temperature detecting portion so that a temperature of the temperature detecting portions does not fluctuate due to the turbulence of the fluid. The flow sensor is formed on a substrate. Each of a first temperature detecting ...


10
Mitsuteru Kimura: Method and apparatus for temperature measurement, and thermal infrared image sensor. Japan Science and Technology Agency, Neifeld IP Law PC, February 8, 2005: US06851849 (15 worldwide citation)

At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential bar ...