1
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame: Method of manufacturing a semiconductor device including reduction of a catalyst. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, November 16, 1999: US05985740 (140 worldwide citation)

Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. The ...


2
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame, Hisashi Ohtani, Toshiji Hamatani: Semiconductor device and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Nixon Peabody, June 20, 2000: US06077731 (136 worldwide citation)

A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for ...


3
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame: Semiconductor device and fabrication method thereof. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, March 30, 1999: US05888858 (134 worldwide citation)

Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obt ...


4
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame, Hisashi Ohtani, Toshiji Hamatani: Thin film transistor having grain boundaries with segregated oxygen and halogen elements. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, July 25, 2000: US06093934 (111 worldwide citation)

Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containin ...


5
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame: Method for fabricating a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, January 30, 2001: US06180439 (89 worldwide citation)

Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film


6
Munehiro Azami, Mitsuaki Osame, Yutaka Shionoiri, Shou Nagao: Digital analog converter and electronic device using the same. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, July 16, 2002: US06420988 (86 worldwide citation)

The present invention relates to a D/A converter circuit which is capable of independently controlling the output voltage amplitude V


7
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame: Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization. Semiconductor Energy Laboratory, Jeffrey L Costellia, Nixon Peabody, October 15, 2002: US06465287 (74 worldwide citation)

Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed in temperature above 750° C. after introducing elemental nickel to a ...


8
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame: Display switch with double layered gate insulation and resinous interlayer dielectric. Semiconductor Energy Laboratory, Jeffrey L Costelli, Nixon Peabody, November 13, 2001: US06316810 (68 worldwide citation)

Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film


9
Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame, Hisashi Ohtani, Toshiji Hamatani: Semiconductor device and method of fabricating same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office PC, March 4, 2003: US06528820 (60 worldwide citation)

There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carri ...


10
Shunpei Yamazaki, Yukio Tanaka, Jun Koyama, Mitsuaki Osame, Satoshi Murakami, Hideto Ohnuma, Etsuko Fujimoto, Hidehito Kitakado: Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate. Semiconductor Energy Laboratory, Jeffrey L Costellia, Nixon Peabody, June 10, 2003: US06576924 (59 worldwide citation)

A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differ ...