Kenji Ishikawa, Mitsuaki Komino, Tadashi Mitui, Teruo Iwata, Izumi Arai, Yoshifumi Tahara: Stage having electrostatic chuck and plasma processing apparatus using same. Tokyo Electron, Tokyo Electron Yamanashi, Oblon Spivak McClelland Maier & Neustadt, January 17, 1995: US05382311 (279 worldwide citation)

A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting ...

Kouichi Kazama, Mitsuaki Komino, Kenji Ishikawa, Yoichi Ueda: Method of controlling temperature of susceptor. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, October 22, 1996: US05567267 (116 worldwide citation)

A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of con ...

Mitsuaki Komino: Reduced pressure and normal pressure treatment apparatus. Tokyo Electron, Beveridge DeGrandi Weilacher & Young L, June 23, 1998: US05769952 (80 worldwide citation)

A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock cha ...

Youichi Deguchi, Satoru Kawakami, Yoichi Ueda, Mitsuaki Komino: Plasma processing apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, September 9, 1997: US05665166 (77 worldwide citation)

Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a proces ...

Mitsuaki Komino, Yoichi Ueda, Youichi Deguchi, Satoru Kawakami: Plasma process apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, December 26, 1995: US05478429 (77 worldwide citation)

The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for su ...

Masahide Watanabe, Masami Kubota, Shiro Koyama, Kenji Ishikawa, Kouichi Kazama, Mitsuaki Komino, Takanori Sakurai: Electrostatic chuck. Tokyo Electron, Tokyo Electron Yamanashi, Oblon Spivak McClelland Maier & Neustadt P C, April 29, 1997: US05625526 (72 worldwide citation)

An electrostatic chuck of this invention includes a conductive film, an insulating coat formed on a susceptor to cover the conductive film, and a feeder circuit for applying a voltage to the conductive film to cause the insulating coat to generate an electrostatic attractive force. The feeder circui ...

Yoichi Ueda, Mitsuaki Komino, Koichi Kazama: Plasma processing apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, December 27, 1994: US05376213 (60 worldwide citation)

A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained ...

Masayuki Tomoyasu, Akira Koshiishi, Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose, Mitsuaki Komino, Hiroto Takenaka, Hiroshi Nishikawa, Yoshio Sakamoto: Plasma treatment method and apparatus. Tokyo Electron, Edgar H Haug, Grace L Pan, Frommer Lawrence & Haug, July 24, 2001: US06264788 (58 worldwide citation)

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f

Mitsuaki Komino: Treatment apparatus control method. Tokyo Electron, Graham & James, December 17, 1996: US05584971 (58 worldwide citation)

This invention provides a method of controlling a treatment apparatus including a treatment chamber adjustable to a desired reduced-pressure atmosphere, a mounting table arranged in the treatment chamber to mount an object to be treated, a cooling medium container provided in the mounting table, and ...

Mitsuaki Komino, Osamu Uchisawa: Drying processing method and apparatus using same. Tokyo Electron, Motoyama Eng Works, Morrison & Foerster, October 24, 2000: US06134807 (57 worldwide citation)

A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas ...

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