1
Moris Kori, Alfred W Mak, Jeong Soo Byun, Lawrence Chung Lai Lei, Hua Chung, Ashok Sinha, Ming Xi: Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques. Applied Materials, Moser Patterson & Sheridan, April 22, 2003: US06551929 (239 worldwide citation)

A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, ...


2
Anh N Nguyen, Michael X Yang, Ming Xi, Hua Chung, Anzhong Chang, Xiaoxiong Yuan, Siqing Lu: Lid assembly for a processing system to facilitate sequential deposition techniques. Applied Materials, Moser Patterson & Sheridan, December 9, 2003: US06660126 (103 worldwide citation)

A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path ...


3
Hongbin Fang, Hyung Suk A Yoon, Ken Kaung Lai, Chi Chung Young, James Horng, Ming XI, Michael X Yang, Hua Chung: Method for depositing refractory metal layers employing sequential deposition techniques. Applied Materials, Moser Patterson & Sheridan, September 28, 2004: US06797340 (89 worldwide citation)

A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing ...


4
Siqing Lu, Yu Chang, Dongxi Sun, Vinh Dang, Michael X Yang, Anzhong Chang, Anh N Nguyen, Ming Xi: Valve control system for atomic layer deposition chamber. Applied Materials, Dugan & Dugan, May 11, 2004: US06734020 (85 worldwide citation)

A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and ...


5
Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi: Multiple precursor cyclical deposition system. Applied Materials, Moser Patterson & Sheridan, January 25, 2005: US06846516 (81 worldwide citation)

Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a subst ...


6
Xinliang Lu, Ping Jian, Jong Hyun Yoo, Ken Kaung Lai, Alfred W Mak, Robert L Jackson, Ming Xi: Pulsed nucleation deposition of tungsten layers. Applied Materials, Patterson & Sheridan, May 1, 2007: US07211144 (79 worldwide citation)

A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generate ...


7
Chen An Chen, Avgerinos Gelatos, Michael X Yang, Ming Xi, Mark M Hytros: Apparatus and method for plasma assisted deposition. Applied Materials, Moser Patterson & Sheridan, February 14, 2006: US06998014 (73 worldwide citation)

Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower ...


8
Lawrence C Lei, Alfred W Mak, Gwo Chuan Tzu, Avi Tepman, Ming Xi, Walter Benjamin Glenn: Clamshell and small volume chamber with fixed substrate support. Applied Materials, Moser Patterson & Sheridan, March 15, 2005: US06866746 (71 worldwide citation)

Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate re ...


9
Sean M Seutter, Michael X Yang, Ming Xi: Formation of a tantalum-nitride layer. Applied Materials, Moser Patterson & Sheridan, October 4, 2005: US06951804 (64 worldwide citation)

A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers (305, 307) of tantalum and nitrogen. The nitroge ...


10
Turgut Sahin, Yaxin Wang, Ming Xi: Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application. Applied Materials, Moser Patterson & Sheridan, September 23, 2003: US06624064 (61 worldwide citation)

The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon sou ...