1
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronic Materials, S Matthew Cairns, June 16, 2009: US07547631 (4 worldwide citation)

Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


2
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronics Materials, S Matthew Cairns, May 12, 2009: US07531458 (2 worldwide citation)

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


3
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Huazhi Li, Qing Min Wang: Method of forming metal-containing layer using organometallic compounds. Rohm and Haas Electronic Materials, S Matthew Cairns, September 6, 2011: US08012536 (1 worldwide citation)

Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have im ...


4
Deodatta Shenai-Khatkhate
Deodatta Vinayak SHENAI KHATKHATE, Stephen J Manzik, Qing Min Wang: Precursor compositions and methods. Rohm and Haas Electronic Materials, November 24, 2011: US20110287184-A1

Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful i ...


5
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Stephen J Manzik, Qing Min Wang: Precursor compositions and methods. Rohm and Haas Electronic Materials, S Matthew Cairns, Rohm and Haas Electronic Materials, January 15, 2009: US20090017208-A1

Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful i ...


6
Deodatta Shenai-Khatkhate
Qing Min Wang, Deodatta Vinayak Shenai Khatkhate, Huazhi Ll: Organometallic compounds. Rohm and Haas Electronic Materials, March 17, 2011: US20110064879-A1

Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.


7
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Huazhi Li, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronic Materials, Rohm And Haas Electronic Materials, December 11, 2008: US20080305260-A1

Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liq ...


8
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronic Materials, Rohm And Haas Electronic Materials, January 31, 2008: US20080026578-A1

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


9

10
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronic Materials, Rohm And Haas Electronic Materials, January 31, 2008: US20080026577-A1

Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.



Click the thumbnails below to visualize the patent trend.