1
Kunihiko Nishi, Michio Tanimoto, Toshihiro Yasuhara, Katsuhiro Tabata, Yasuhiro Yoshikawa, Isao Akima, Souichi Kunito, Toshio Nosaka, Hideaki Nakamura: Semiconductor device and an electronic device with the semiconductor devices mounted thereon. Hitachi, Hitachi VSLI Engineering, Antonelli Terry Stout & Kraus, November 30, 1993: US05266834 (193 worldwide citation)

A package is provided for achieving higher packing density and higher circuit integration of memories, in particular, a structure is provided having a plurality of thin, surface mount packages which are stacked up. Each of the laminated packages includes a semiconductor pellet, leads fixed to the fr ...


2
Toshio Sugano, Kohji Nagaoka, Seiichiro Tsukui, Yoshiaki Wakashima, Michio Tanimoto, Masayuki Watanabe, Suguru Sakaguchi, Kunihiko Nishi, Aizo Kaneda, Kohji Serizawa, Michiharu Honda, Tohru Yoshida, Takeshi Komaru, Atsushi Nakamura: Semiconductor stacked device. Hitachi, Hitachi Tobu Semiconductor, Antonelli Terry Stout & Kraus, March 30, 1993: US05198888 (173 worldwide citation)

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and ...


3
Toshio Sugano, Kohji Nagaoka, Seiichiro Tsukui, Yoshiaki Wakashima, Michio Tanimoto, Masayuki Watanabe, Suguru Sakaguchi, Kunihiko Nishi, Aizo Kaneda, Kohji Serizawa, Michiharu Honda, Tohru Yoshida, Takeshi Komaru, Atsushi Nakamura: Stacked semiconductor memory device and semiconductor memory module containing the same. Hitachi, Hitachi Tobu Semiconductor, Antonelli Terry Stout & Kraus, August 2, 1994: US05334875 (62 worldwide citation)

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and ...


4
Toshio Sugano, Kohji Nagaoka, Seiichiro Tsukui, Yoshiaki Wakashima, Michio Tanimoto, Masayuki Watanabe, Suguru Sakaguchi, Kunihiko Nishi, Aizo Kaneda, Kohji Serizawa, Michiharu Honda, Tohru Yoshida, Takeshi Komaru, Atsushi Nakamura: Semiconductor device and semiconductor module with a plurality of stacked semiconductor devices. Hitachi, HitachiTobu Semiconductor, Antonelli Terry Stout & Kraus, July 2, 1991: US05028986 (61 worldwide citation)

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and ...


5
Kunihiro Tsubosaki, Michio Tanimoto, Kunihiko Nishi, Masahiro Ichitani, Shunji Koike, Kazunari Suzuki, Ryosuke Kimoto, Ichiro Anjoh, Taisei Jin, Akihiko Iwaya, Gen Murakami, Masamichi Ishihara, Junichi Arita: Semiconductor device. Hitachi, Hitachi Microcomputer Systems, Antonelli Terry Stout & Kraus, February 3, 1998: US05714405 (53 worldwide citation)

A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured ...


6
Kenji Sekine, Hiroshi Kondoh, Keigo Kamozaki, Hideyuki Nagaishi, Kazuo Matsuura, Terumi Nakazawa, Michio Tanimoto, Hideaki Sasaki, Yuzo Taniguchi: High-frequency transmitter-receiver apparatus for such an application as vehicle-onboard radar system. Hitachi, Antonelli Terry Stout & Kraus, June 19, 2001: US06249242 (44 worldwide citation)

A high-frequency transmitter-receiver apparatus includes a transceiver circuit realized in a planar structure by a dielectric substrate and a semiconductor chip and a planar antenna formed on a dielectric substrate are provided on front and rear surfaces, respectively, of a single electrically condu ...


7
Kunihiro Tsubosaki, Michio Tanimoto, Kunihiko Nishi, Masahiro Ichitani, Shunji Koike, Kazunari Suzuki, Ryosuke Kimoto, Ichiro Anjoh, Taisei Jin, Akihiko Iwaya, Gen Murakami, Masamichi Ishihara, Junichi Arita: Semiconductor device with lead structure within the planar area of the device. Hitachi, Hitachi Microcomputer System, Antonelli Terry Stout & Kraus, December 10, 1996: US05583375 (42 worldwide citation)

A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured ...


8
Susumu Okikawa, Michio Tanimoto: Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method. Hitachi, Antonelli Terry Stout & Kraus, March 5, 1991: US04998002 (24 worldwide citation)

A semiconductor device is fabricated by placing a semiconductor chip with at least one bonding pad on the bonding stage of a wire bonder. A coated wire on a spool is passed through a bore in a bonding capillary so that one end of the wire projects from the lower tip of the capillary. An electrical a ...


9
Tsuyoshi Kaneda, Susumu Okikawa, Hiroshi Mikino, Hiroshi Watanabe, Toshihiro Satou, Atsushi Onodera, Michio Tanimoto: Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method. Hitachi, Hitachi Microcomputer Engineering, Hitachi Tokyo Electronics, Antonelli Terry Stout & Kraus, July 16, 1991: US05031821 (23 worldwide citation)

The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delive ...


10
Michio Tanimoto, Kazuyuki Uekawa, Tatsuya Kawajiri: Production method of acrylic acid. Nippon Shokubai, Sherman & Shalloway, May 30, 2000: US06069271 (23 worldwide citation)

A method for producing acrylic acid from propylene at high efficiency by two-stage catalytic oxidation using a single fixed bed shell-and-tube heat exchanger type reactor is provided. The method comprises dividing the shell space of said reactor into an upper space and lower space with a partition p ...