1
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Method to deposit SiOCH films with dielectric constant below 3.0. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, January 22, 2002: US06340628 (92 worldwide citation)

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO


2
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Dielectric films with low dielectric constants. Beyer Weaver & Thomas, June 10, 2003: US06576345 (47 worldwide citation)

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like ...


3
Adrianne K Tipton, Brian G Lu, Patrick A Van Cleemput, Michelle T Schulberg, Qingguo Wu, Haiying Fu, Feng Wang: Method of porogen removal from porous low-k films using UV radiation. Novellus Systems, Beyer Weaver & Thomas, April 24, 2007: US07208389 (104 worldwide citation)

Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-ox ...


4
Feng Wang, Michelle T Schulberg, Jianing Sun, Raashina Humayun, Patrick A Van Cleemput: Plasma detemplating and silanol capping of porous dielectric films. Novellus Systems, Beyer Weaver & Thomas, February 13, 2007: US07176144 (81 worldwide citation)

Methods of preparing a low-k dielectric material on a substrate are provided. The methods involve using plasma techniques to remove porogen from a precursor layer comprising porogen and a dielectric matrix and to protect the dielectric matrix with a silanol capping agent, resulting in a low-k dielec ...


5
Michelle T Schulberg, Raashina Humayun, Patrick A Van Cleemput, Wilbert GM Van den Hoek: System for deposition of mesoporous materials. Lathrop & Gage Lc, May 20, 2004: US20040096586-A1 (1 worldwide citation)

An automated deposition system includes a template deposition chamber that is used to deposit a mesostructured template on a wafer or other substrate, such as an optical lens. A supercritical infusion chamber infuses the mesoporous template with a matrix-forming material that is cured to produce a m ...