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Michel Marty, Herve Jaouen: Transformer for integrated circuits. STMicroelectronics, Theodore E Galanthay, David V Seed and Berry Carlson, February 29, 2000: US06031445 (121 worldwide citation)

A invention provides a transformer for use in integrated circuits, comprising four layers of conductive lines, separated from each other by first, second and third insulating layers. First conductive vias traverse the second insulating layer to connect said second and third pluralities of conducting ...


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Annie Baudrant, Michel Marty: Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation. Societe pour d Etude et la Fabrication de Circuits Integres Speciaux EFCS, Roland Plottel, June 10, 1986: US04593454 (50 worldwide citation)

The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on t ...


3
Michel Marty, Francois Leverd, Philippe Coronel, Joaquin Torres: Isolating trench and manufacturing process. STMicroelectronics, Lisa K Jorgenson, Allen Dyer Doppelt Milbrath & Gilchrist P A, December 7, 2004: US06828646 (48 worldwide citation)

An isolation trench formed in a semiconductor substrate has side walls and a bottom wall. Spacers are on the side walls and face each other for forming a narrow channel therebetween. The bottom wall and the spacers are coated with an electrically insulating material for delimiting a closed empty cav ...


4
Alain Chantre, Michel Marty, Didier Dutartre, Augustin Monroy, Michel Laurens, Francois Guette: Low-noise vertical bipolar transistor and corresponding fabrication process. STMicroelectronics, Theodore E Galanthay, Allen Dyer Doppelt Milbrath & Gilchrist P A, January 23, 2001: US06177717 (22 worldwide citation)

The intrinsic collector of a vertical bipolar transitor is grown epitaxially on an extrinsic collector layer buried in a semiconductor substrate. A lateral isolation region surrounds the upper part of the intrinsic collector and an offset extrinsic collector well is produced. An SiGe heterojunction ...


5
Annie Baudrant, Michel Marty: Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal. Societe pour d Etude et la Fabrication de Circuits Integres Speciaux EFCIS, Roland Plottel, December 22, 1987: US04714951 (20 worldwide citation)

The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on t ...


6
Christian A B Ducrocq, Didier P A Lestrat, Bernard Paintendre, James H Davidson, Michel Marty, Andre Walder: Superalloy compositions with a nickel base. Societe Nationale d Etude et de Construction de Moteurs d Aviation S N E C M A, Association pour la Recherche et le Developpement des Methodes et Processus Industriels A R M I N E S, Tecphy, Office National d Etudes et de Recherches Aerospatiales O N E R A, Oblon Spivak McClelland Maier & Neustadt, April 14, 1992: US05104614 (20 worldwide citation)

Superalloy with a nickel base matrix having good mechanical properties when ot in respect of tensile strength, creep resistance, low cycle fatigue and resistance to crack-propagation of which the composition in percentages by weight is as follows: Cr 11 to 13; Co 8 to 17; Mo 6 to 8; Nb less than or ...


7
Michel Marty, Arnoud Fortuin, Vincent Arnal: Deep insulating trench. STMicroelectronics, Koninklijke Philips Electronics, Lisa K Jorgenson, Allen Dyer Doppelt Milbrath & Gilchrist P A, May 2, 2006: US07038289 (20 worldwide citation)

Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty cavity, and forms a plug to close the cavity. The sides of the trench are configured with a neck that determi ...


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Herve Jaouen, Michel Marty: Semiconductor device having separated exchange means. STMicroelectronics, Theodore E Fleit Kain Gibbons Gutman & Bongini P L Galanthay, June 27, 2000: US06081030 (13 worldwide citation)

A semiconductor device having separated exchange mechanism comprises a chip forming an integrated circuit; a connection substrate; device connection points or balls; and at least one exchange mechanism. The connection substrate comprises an external connection mechanism. The device connection points ...


10
Michel Marty, Alain Chantre, Jorge Regolini: Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process. STMicroelectronics, Commissariat a l&apos Energie Atomique, Lisa K Jorgenson, Allen Dyer Doppelt Milbrath & Gilchrist P A, November 13, 2001: US06316818 (13 worldwide citation)

The vertical bipolar transistor includes an SiGe heterojunction base formed by a stack of layers of silicon and silicon-germanium resting on an initial layer of silicon nitride extending over a side insulation region surrounding the upper part of the intrinsic collector. The stack of layers also ext ...