1
Hwa Cheng, James M DePuydt, Michael A Haase, Jun Qiu: Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, March 7, 1995: US05395791 (119 worldwide citation)

A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200.degree. C. in an MBE chamber. So ...


2
Paul F Baude, Steven D Theiss, Michael A Haase, Eric W Hemmesch: Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes. 3M Innovative Properties Company, Jean A Lown, John M Bronk, November 20, 2007: US07298084 (109 worldwide citation)

Methods and displays utilize row and column drivers with ZnO channels that control pixel transistors with ZnO channels, which in turn address OLEDs of an array to produce images of a display screen. A display backplane including the ZnO row and column drivers and the OLEDs may be constructed by util ...


3
Paul F Baude, Patrick R Fleming, Michael A Haase, Tommie W Kelley, Dawn V Muyres, Steven Theiss: Aperture masks for circuit fabrication. 3M Innovative Properties Company, Lisa P Fulton, May 24, 2005: US06897164 (84 worldwide citation)

Aperture masks and deposition techniques for using aperture masks are described. In addition, techniques for creating aperture masks and other techniques for using the aperture masks are described. The various techniques can be particularly useful in creating circuit elements for electronic displays ...


4
Fred B McCormick, Paul F Baude, Michael A Haase: Encapsulation of organic electronic devices using adsorbent loaded adhesives. 3M Innovative Properties Company, August 30, 2005: US06936131 (49 worldwide citation)

Disclosed herein are organic electronic devices that are encapsulated at least in part by adsorbent-loaded transfer adhesives. The adsorbent material may be a dessicant and/or a getterer. The adsorbent-loaded transfer adhesive may form a gasket around the periphery of the device, or may cover the en ...


5
Steven D Thelss, Paul F Baude, Michael A Haase, Eric W Hemmesch, Yaoqi J Liu, Sergey S Lamansky: Methods of making displays. 3M Innovative Properties Company, Jean A Lown, Stephen F Wolf, January 12, 2010: US07645478 (40 worldwide citation)

Methods of forming displays are described. The displays have zinc oxide row and column drivers integrated onto the same display substrate as zinc oxide pixel transistors and organic light emitting diodes. The organic light emitting diodes are prepared, at least in part, using a thermal transfer proc ...


6
Paul F Baude, Patrick R Fleming, Michael A Haase, Tommie W Kelley, Dawn V Muyres, Steven Theiss: In-line deposition processes for circuit fabrication. 3M Innovative Properties Company, Lisa P Fulton, November 23, 2004: US06821348 (37 worldwide citation)

In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of la ...


7
Michael A Haase, Hwa Cheng, James M DePuydt, Jun Qiu: Blue-green laser diode. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Walter C Linder, March 1, 1994: US05291507 (35 worldwide citation)

A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the f ...


8
Michael A Haase, Jun Qiu, Hwa Cheng, James M DePuydt: Buried ridge II-VI laser diode. Minnesota Mining & Manufacturing Compay, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, April 4, 1995: US05404027 (31 worldwide citation)

A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.


9
Thomas J Miller, Michael A Haase, Terry L Smith, Xiaoguang Sun: Adapting short-wavelength LEDs for polychromatic, broadband, or “white” emission. 3M Innovative Properties Company, Robert S Moshrefzadeh, July 22, 2008: US07402831 (28 worldwide citation)

An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED m ...


10
Robert M Park, James M DePuydt, Hwa Cheng, Michael A Haase: Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals. Minnesota Mining and Manufacturing Company, Kinney & Lange, September 28, 1993: US05248631 (28 worldwide citation)

A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular b ...